Volume 41-42; Issue none

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Applied Surface Science
Volume 41-42; Issue none

Applied Surface Science

Volume 41-42; Issue none

1

Editorial Board

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 108 KB

english, 1989

2

Preface

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 79 KB

english, 1989

3

Conference organization

Journal:

Applied Surface Science

Year:

1989

File:

PDF, 35 KB

1989

4

Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface

M.H. Hecht, L.D. Bell, W.J. Kaiser

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 834 KB

english, 1989

5

Synchrotron radiation investigation and surface spectroscopy studies of prototypical systems: Lead-semiconductor interfaces

G. Le Lay, K. Hricovini, J.E. Bonnet

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1020 KB

english, 1989

6

The difference between 6H-SiC (0001) and (0001) faces observed by AES, LEED and ESCA

S. Nakanishi, H. Tokutaka, K. Nishimori, S. Kishida, N. Ishihara

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 356 KB

english, 1989

7

Observation of Si and SiC surface structures using the magnetic LEED method

K. Nishimori, H. Tokutaka, Z. Okinaga, S. Kishida, N. Ishihara

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 368 KB

english, 1989

8

Characterization of semiconductor oxides by IR diffuse reflectance spectroscopy

Kaori Matsuo, Katsuyuki Nakano

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 255 KB

english, 1989

9

Initial stages of metal/semiconductor interface formation: Au and Ag on Si(111)

R.Stanley Williams, Richard S. Daley, Judy H. Huang, Robert M. Charatan

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 453 KB

english, 1989

10

Rheed intensity analysis of Si(111)√3×√3-Ag structure

A. Ichimiya, S. Kohmoto, T. Fujii, Y. Horio

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 443 KB

english, 1989

11

STM studies of metal-semiconductor interface formation

F. Salvan, F. Thibaudau, Ph. Dumas

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 2.93 MB

english, 1989

12

LEED I-V curve analysis for the structure of iron films on Si(111) surfaces

T. Urano, M. Kaburagi, S. Hongo, T. Kanaji

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 327 KB

english, 1989

13

Application of HREELS to Al/GaAs and Al/GaP interfaces

X.M. Ding, G.S. Dong, X.K. Lu, H.Y. Xiao, P. Chen, X. Wang

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 335 KB

english, 1989

14

Mechanisms of barrier formation in schottky contacts: Metal-induced surface and interface states

Winfried Mönch

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 954 KB

english, 1989

15

From heterojunction interfaces to metal-semiconductor interfaces

D.W. Niles, M. Tang, J. McKinley, R. Zanoni, G. Margaritondo

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 393 KB

english, 1989

16

Semiconductor interface formation: The role of the induced density of interface states

F. Flores, A. Muñoz, J.C. Durán

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 614 KB

english, 1989

17

Pressure dependences of silicide/silicon Schottky barrier heights

J.H. Werner, H. Von Känel, G. Markewitz, R.T. Tung

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 407 KB

english, 1989

18

Bismuth on GaAs(110): Characterisation of growth mode and Schottky barrier formation at low and room temperature

N. Esser, M. Hünermann, U. Resch, D. Spaltmann, J. Geurts, D.R.T. Zahn, W. Richter, R.H. Williams

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 429 KB

english, 1989

19

Electrical characteristics of metal contacts on the surfaces of a-Si:H films annealed at low temperature

Yasuo Gekka, Masaki Saitoh, Kohji Ohga, Yosinori Akaida, Makio Akimoto

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 405 KB

english, 1989

20

Metal contacts to II-VI semiconductors: CdS and CdTe

R.H. Williams, N. Forsyth, I.M. Dharmadasa, Z. Sobiesierski

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 430 KB

english, 1989

21

Effects of interfacial microstructure on ohmic contacts to GaAs

Masanori Murakami, H.J. Kim, Yin-Cheng Shih, W.H. Price, C.C. Parks

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 505 KB

english, 1989

22

Spectroscopic study of metal/semimetal and metal/semiconductor interfaces

R. Sporken, P.A. Thiry, P. Xhonneux, R. Caudano, J.P. Delrue

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 515 KB

english, 1989

23

Thermal stability of WSiN-GaAs and Au-WSiN interfaces

Hirohiko Sugahara, Jin Nagano

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 324 KB

english, 1989

24

Deep level transient spectroscopic studies of the perovskite oxides as gas sensor material

Tsuyoshi Arakawa, Hideyuki Baba, Gin-ya Adachi

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 340 KB

english, 1989

25

Epitaxial growth of a mono-crystalline metastable AuIn layer at the Au/InP(001) interface

M. Renda, K. Morita

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 590 KB

english, 1989

26

SPA-LEED studies of defects in thin epitaxial NiSi2 layers on Si(111)

J. Falta, M. Horn, M. Henzler

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 494 KB

english, 1989

27

Heteroepitaxy of metallic and semiconducting silicides on silicon

N. Cherief, R. Cinti, M. De Crescenzi, J. Derrien, T.A. Nguyen Tan, J.Y. Veuillen

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.08 MB

english, 1989

28

Interfacial structure of ICB epitaxially deposited Al(110) bicrystal films on Si(100) substrates

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 419 KB

english, 1989

29

Crystalline quality of heteroepitaxial silicon on epitaxial NiSi2/Si(100)

Masahiro Itoh, Masako Kinoshita, Tuneo Ajioka, Masanori Itoh, Taroh Inada

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 346 KB

english, 1989

30

TiSi2 formation at the Ti-rich TiNx/Si interface

Norifumi Fujimura, Taichiro Ito

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1020 KB

english, 1989

31

Barrier metal between tungsten and silicon for high temperature processing

K. Suguro, Y. Nakasaki, T. Yoshii, T. Itoh

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 422 KB

english, 1989

32

Characterization of Si-Rich WSix on Si

Norifumi Fujimura, Shoji Tachibana, Taichiro Ito

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 352 KB

english, 1989

33

Thermal instability of the TiSi2/Si structure: Impurity effects

S. Ogawa, T. Yoshida, T. Kouzaki, S. Okuda, K. Tsukamoto

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 627 KB

english, 1989

34

Interfacial reaction of nickel/hydrogenated amorphous silicon system at low temperature studied by fluorescence exafs

Yunosuke Kawadzu, Mitsuru Iloka, Americo Fujii, Hiroyuki Oyanagi, Toshihiro Arai

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 436 KB

english, 1989

35

Evaluation of dopant profiles and diffusion constants by means of electron energy loss spectroscopy

A. Förster, J.M. Layet, H. Lüth

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 484 KB

english, 1989

36

Interfacial superstructures studied by grazing incidence x-ray diffraction

K. Akimoto, J. Mizuki, I. Hirosawa, J. Matsui

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 467 KB

english, 1989

37

The analysis of complex samples by spectroscopic ellipsometry

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 528 KB

english, 1989

38

Direct imaging and theoretical modelling of the atomistic morphological and chemical structure of semiconductor heterointerfaces

J. Christen, M. Grundmann, D. Bimberg

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.04 MB

english, 1989

39

In-situ UHV electron microscope study of metal-silicon surfaces

K. Takayanagi, Y. Tanishiro, T. Ishitsuka, K. Akiyama

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 594 KB

english, 1989

40

Bonding at silicon/insulator interfaces

F.J. Himpsel, T.F. Heinz, A.B. McLean, E. Palange

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 540 KB

english, 1989

41

Local roughness and surface states on Si(001): Analysis of vacuum annealings and oxygen adsorption-desorption processes

C.A. Sébenne, J.P. Lacharme, I. Andriamanantenasoa, M. Khial

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 457 KB

english, 1989

42

HRTEM observation of the Si/SiO2 interface

Hiroyuki Akatsu, Iwao Ohdomari

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.40 MB

english, 1989

43

The Si(001)/SiO2 interface

A. Ourmazd, P.H. Fuoss, J. Bevk, J.F. Morar

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.04 MB

english, 1989

44

Interface GaAs - gallium fluoride thin film grown by fluorination: Electrical behaviour of the obtained MIS fluorinated GaAs structures

A.S. Barriére, G. Couturier, H. Guegan, T. Séguelong, A. Thabti, P. Alnot, J. Chazelas

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 505 KB

english, 1989

45

X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation

H. Ishii, H. Hasegawa, A. Ishii, H. Ohno

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 427 KB

english, 1989

46

Insulator-semiconductor interface formation by electronic promotion using alkali metal and removal of the catalyst

P. Soukiassian, H.I. Starnberg, T. Kendelewicz

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 616 KB

english, 1989

47

Optical and interfacial properties of SiO2 films deposited on Si by photo-CVD

Kohji Inoue, Masanori Okuyama, Yoshihiro Hamakawa

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 369 KB

english, 1989

48

Structural studies of ultrathin silicon oxides and their interfaces by XPS

Takeo Hattori, Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, Kikuo Yamabe

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 359 KB

english, 1989

49

Protuberance growth at polysilicon surfaces during oxidation

Soichi Nadahara, Jun-ichi Shiozawa, Keitaro Imai, Kyoichi Suguro, Kikuo Yamabe

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 437 KB

english, 1989

50

Formation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma

Y. Yasuda, S. Zaima, T. Kaida, Y. Koide

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 324 KB

english, 1989

51

Piezoresistance in n-channel inversion layers of Si MOSFET's

S. Zaima, T. Maruyama, Y. Yasuda

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 493 KB

english, 1989

52

Roughness induced at Si(111) surfaces by high temperature heating

Y. Borensztein, T. Lopez-Rios, G. Vuye

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 304 KB

english, 1989

53

Iron accumulation at the Si-SiO2 interface and possible reduction of SiO2

Y. Kamiura, F. Hashimoto, M. Iwami

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 338 KB

english, 1989

54

Heteroepitaxy of a two-dimensional material on a three-dimensional material

Atsushi Koma, Koichiro Saiki, Yasuhiro Sato

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 450 KB

english, 1989

55

Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy

M. Yano, M. Ashida, Y. Iwai, M. Inoue

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 519 KB

english, 1989

56

Electronic structure of modulation n-doped multiple quantum well

C. López, J. Sánchez-dehesa, F. Meseguer, F. Borondo, K. Ploog

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 401 KB

english, 1989

57

RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAs

S. Tatarenko, J. Cibert, Y. Gobil, G. Feuillet, K. Saminadayar, A.C. Chami, E. Ligeon

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.22 MB

english, 1989

58

Evaluation of disordering at low doping concentration in selectively Si-doped Al0.3Ga0.7As/GaAs heterointerfaces

S. Goto, H. Kakibayashi, M. Kawata, T. Usagawa

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.41 MB

english, 1989

59

Interface formation on n- and p-CdTe(110) surfaces with Cu and Au

B.A. Orlowski, J.P. Lacharme, C.A. Sébenne, S. Bensalah

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 426 KB

english, 1989

60

MOVPE-grown GaN on polar planes of 6H-SiC

T. Sasaki, T. Matsuoka, A. Katsui

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 560 KB

english, 1989

61

Interface geometry of (GaAs)n(InAs)n and (GaP)n(InP)n ultra-thin superlattices

S.K. De Figueiredo, A.C. Ferraz

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 238 KB

english, 1989

62

Characterization of the GaAs buffer layer grown on GaP by MBE for the two-step growth method

Takashi Nomura, Kazuhito Wakatuki, Masahiro Miyao, Minoru Hagino

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 274 KB

english, 1989

63

Electrical properties and structures of the MOCVD-AIN/GaAs interface

S. Fujieda, K. Akimoto, I. Hirosawa, Y. Mochizuki, J. Mizuki, Y. Matsumoto, J. Matsui

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 432 KB

english, 1989

64

Evaluation by resonant light scattering of ZnTe epitaxial layer deposited on GaAs

S. Hongo, Y. Kataoka, T. Urano, T. Kanaji

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 297 KB

english, 1989

65

Photoluminescence line shape due to arrayed steps at the interfaces of GaAs/AlGaAs single quantum wells grown on vicinal surfaces by molecular beam epitaxy

K. Kanamoto, K. Fujiwara, Y. Tokuda, N. Tsukada, M. Ishii, T. Nakayama

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 339 KB

english, 1989

66

Raman study of strain distribution in interface region of GaAs/GaP heteroepitaxial layers grown by MBE

Takayuki Takeuchi, Chikako Maezawa, Takashi Nomura, Kenji Ishikawa, Masahiro Miyao, Minoru Hagino

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 282 KB

english, 1989

67

Strained-layer superlattice buffers for high-quality heteroepilayers of ZnSe on GaAs

Shigeo Hayashi, Takao Sakamoto, Shizuo Fujita, Shigeo Fujita

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 371 KB

english, 1989

68

Heteroepitaxy between layered semiconductors GaSe and InSe

C. Tatsuyama, T. Tanbo, N. Nakayama

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 399 KB

english, 1989

69

Charge transport and trapping at the interface in two-layer organic photoconductors

Yoshihiko Kanemitsu, Shunji Imamura

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 304 KB

english, 1989

70

Distribution of interfacial As atoms in the electron-beam exposure and epitaxy (EBE-epitaxy) technique for growing GaAs films on CaF2/Si(111) structures

H.C. Lee, H. Ishiwara, S. Furukawa, K. Saiki, A. Koma

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 542 KB

english, 1989

71

Formation of A GexSi1-x alloy layer by high-energy electron-beam irradiation

T. Wada, M. Takeda, T. Yamada, M. Ichimura

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 313 KB

english, 1989

72

Determination of band line-up in β-SiC/Si heterojunction for Si-HBT's

T. Aoyama, T. Sugii, T. Ito

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 211 KB

english, 1989

73

Raman study of the stress in MBE-grown AlxGa1-xAs on Si

Kanji Iizuka, Takashi Yoshida, Makoto Hasobe, Ikuo Matsuda, Toshimasa Suzuki

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 295 KB

english, 1989

74

Properties of a-Si:H based interface transient layers measured by in-situ ellipsometry

Yoshinori Hatanaka, Kunihiko Mitsuoka, Tomuo Yamaguchi

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 404 KB

english, 1989

75

Porous silicon: The material and its applications in silicon-on-insulator technologies

G. Bomchil, A. Halimaoui, R. Herino

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.09 MB

english, 1989

76

Low temperature oxidation of crystalline porous silicon

Y. Kato, T. Ito, A. Hiraki

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 483 KB

english, 1989

77

Crystal-amorphous-silicon interface kinetics under ion beam irradiation

F. Priolo, A. La Ferla, C. Spinella, E. Rimini, S.U. Campisano, G. Ferla

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 664 KB

english, 1989

78

Applications of the silicon wafer direct-bonding technique to electron devices

K. Furukawa, A. Nakagawa

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 526 KB

english, 1989

79

Growth behavior of highly oriented Si films on fused quartz by photo-CVD

Masanori Okuyama, Noriaki Fujiki, Yoshiki Nakatani, Kohji Inoue, Yoshihiro Hamakawa

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 394 KB

english, 1989

80

Selective nucleation based epitaxy (sentaxy): Investigation of initial nucleation stages

H. Kumomi, T. Yonehara, Y. Nishigaki, N. Sato

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 330 KB

english, 1989

81

Microstructure of high temperature annealed SIMOX wafer

Hiroshi Miyatake, Yasuo Yamaguchi, Yoji Mashiko, Tadashi Nishimura, Hiroshi Koyama

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 513 KB

english, 1989

82

Photoemission studies of bonding properties at the MBE-grown CaF2/GaAs interface

Y. Yamada Maruo, M. Oshima, T. Waho, T. Kawamura, S. Maeyama, T. Miyahara

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 600 KB

english, 1989

83

Author index

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 644 KB

english, 1989

84

Subject index

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.44 MB

english, 1989

85

From synchrotron radiation to I-V measurements of GaAs schottky barrier formation

W.E. Spicer, R. Cao, K. Miyano, T. Kendelewicz, I. Lindau, E. Weber, Z. Liliental-Weber, N. Newman

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.40 MB

english, 1989

86

Infrared field assisted photoemission of metal-semiconductor structures

D. Paget, H.-J. Drouhin, J. Peretti

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 481 KB

english, 1989

87

A new non-destructive analysis of semiconductor heterojunctions with very thin surface layers: An application of soft x-ray spectroscopy to Si-compound (film)/Si (substrate)

M. Iwami, M. Kusaka, M. Hirai, H. Nakamura

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 354 KB

english, 1989

88

X-ray scattering studies of semiconductor interfaces: Atomic structure and morphology

E. Vlieg, J.F. van der Veen

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 704 KB

english, 1989

89

Photoelectron spectroscopy and photoelectron diffraction studies of Si(001)2×1-K and -Cs surfaces

S. Kono, Y. Enta, T. Abukawa, T. Kinoshita, T. Sakamoto

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 562 KB

english, 1989

90

Mechanism of alloy formation due to noble metal deposition on silicon surfaces at room temperature: Chemical bonding model

M. Iwami, M. Kusaka, M. Hirai, M. Kubota, H. Tochihara, Y. Murata

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 481 KB

english, 1989

91

RHEED intensity analysis of Li/Si(111) structures

S. Kohmoto, S. Mizuno, A. Ichimiya

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 443 KB

english, 1989

92

Structural study of Ag overlayers deposited on a Si(111) substrate by impact-collision ion-scattering-spectroscopy with time-of-flight detection

Koji Sumitomo, Kenichiro Tanaka, Yosuke Izawa, Itsuo Katayama, Fumiya Shoji, Kenjiro Oura, Teruo Hanawa

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 529 KB

english, 1989

93

Initial stages of aluminum epitaxy on the Si(111)√3×√3-Al surface studied by electron-energy-loss spectroscopy

Sung-Te Li, Shigehiko Hasegawa, Nobuhisa Yamashita, Hisao Nakashima

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 365 KB

english, 1989

94

Delocalization of defects: A new model for the Schottky barrier

R. Ludeke, A. Taleb-Ibrahimi, G. Jezequel

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 690 KB

english, 1989

95

Electronic structure of Si/disilicide interfaces

Hideaki Fujitani, Setsuro Asano

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 421 KB

english, 1989

96

Control of the Al/GaAs Schottky barrier height using a rare-earth metal interlayer

K. Hirose, H. Tsuda, T. Mizutani

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 428 KB

english, 1989

97

Temperature effects on the formation of the Sb/InP(110) interface

D.R.T. Zahn, W. Richter, A.B. McLean, R.H. Williams, C. Stephens, I.T. McGovern, R. Cimino, W. Braun, N. Esser

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 349 KB

english, 1989

98

Epitaxial CoSi2/Si(111) interfaces

R.T. Tung, F. Schrey

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 3.13 MB

english, 1989

99

Chemical bonding at metal-semiconductor interfaces

P.J. Van den Hoek, E.J. Baerends

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 435 KB

english, 1989

100

Identification of three distinct CoSi2(111)(1×1) surface structures

L. Haderbache, P. Wetzel, C. Pirri, J.C. Peruchetti, D. Bolmont, G. Gewinner

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 429 KB

english, 1989

101

Oxidation of TaSi2 thin films on polycrystalline Si

T.A. Nguyen Tan, N. Guerfi, J.Y. Veuillen, J. Derrien

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 478 KB

english, 1989

102

Influence of annealing ambients on ZrSi2 formation

Y. Igarashi, T. Yamaji, S. Nishikawa, S. Ohno

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 471 KB

english, 1989

103

Silicidation of porous silicon and its application for the fabrication of a buried metal layer

T. Ito, A. Yamama, A. Hiraki, M. Satou

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 418 KB

english, 1989

104

Angle-resolved photoemission study of the As/Ge(100) interface

J.F. Morar, U.O. Karlsson, R.I.G. Uhrberg, J. Kanski, P.O. Nilsson, H. Qu

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 359 KB

english, 1989

105

UV absorption spectra of adlayers of MOCVD source gases

Masahiro Sasaki, Yoshito Kawakyu, Hironori Ishikawa, Masao Mashita

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 332 KB

english, 1989

106

Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors

H. Hasegawa, H. Ohno, H. Ishii, T. Haga, Y. Abe, H. Takahashi

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.05 MB

english, 1989

107

A computer simulation of the recombination process at compound semiconductor surfaces and hetero-interfaces

Toshiya Saitoh, Hideki Hasegawa, Seiichi Konishi, Hideo Ohno

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 384 KB

english, 1989

108

Accumulation of implanted arsenic at the interface during annealing on thermally oxidized Si and SiO2 covered Si

Katsuhiro Yokota, Koichi Ohtsuki, Masatoshi Ochi, Shinji Ishihara, Itsuro Kimura

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 1.36 MB

english, 1989

109

Studies on charge trapping and interface state generation in MOS capacitors at low temperatures

Y. Yasuda, S. Zaima, M. Sakashita

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 376 KB

english, 1989

110

Surface nitridation of InP with A N2 plasma

Kiichi Kamimura, Yasuhiro Takase, Yoshiharu Onuma, Akio Kunioka

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 294 KB

english, 1989

111

Surface intervalley scattering on GaAs(110) studied with picosecond laser photoemission

R. Haight, J.A. Silberman

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 349 KB

english, 1989

112

The influence of Cd overpressure in the molecular beam epitaxy of InSb/CdTe heterostructures: A combined raman and infrared spectroscopy study

D.R.T. Zahn, W. Richter, T. Eickhoff, J. Geurts, T.D. Golding, J.H. Dinan, K.J. Mackey, R.H. Williams

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 544 KB

english, 1989

113

Raman scattering and photoluminescence characterization of Ge/Si strained-layer superlattices grown by phase-locked epitaxy

H. Okumura, K. Miki, K. Sakamoto, T. Sakamoto, K. Endo, S. Yoshida

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 394 KB

english, 1989

114

Chemistry and adhesion of metal-polymer interfaces

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 622 KB

english, 1989

115

Atomic rearrangement during the initial stages of GaAs growth on Si(111)(√3×√3)-Ga surface

Kenzo Maehashi, Shigehiko Hasegawa, Hisao Nakashima

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 373 KB

english, 1989

116

Interfacial structures and selective growth of diamond particles formed by plasma-assisted CVD

Jing-sheng MA, Hiroshi Kawarada, Takao Yonehara, Jun-ichi Suzuki, Jin Wei, Yoshihiro Yokota, Hirotaro Mori, Hiroshi Fujita, Akio Hiraki

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 985 KB

english, 1989

117

Interfacial layers of InP/Si heteroepitaxy

H. Horikawa, M. Akiyama, S. Onozawa, Y. Kawai, M. Sakuta

Journal:

Applied Surface Science

Year:

1989

Language:

english

File:

PDF, 726 KB

english, 1989

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