Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1−xAs
A. Baraldi, C. Ghezzi, A. Parisini, A. Bosacchi, S. FranchiVolume:
50
Year:
1991
Language:
english
Pages:
5
DOI:
10.1016/0169-4332(91)90207-z
File:
PDF, 378 KB
english, 1991