Volume 50; Issue 1-4

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Applied Surface Science
Volume 50; Issue 1-4

Applied Surface Science

Volume 50; Issue 1-4

1

Editorial Board

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 95 KB

english, 1991

2

Preface

G. Bastard, H. Oppolzer

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 58 KB

english, 1991

3

Conference organization

Journal:

Applied Surface Science

Year:

1991

File:

PDF, 17 KB

1991

4

Supporting organizations and sponsors

Journal:

Applied Surface Science

Year:

1991

File:

PDF, 21 KB

1991

5

Study of strain variation in LEC-grown GaAs bulk crystals by synchrotron radiation X-ray topography

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 1.01 MB

english, 1991

6

Multicrystal X-ray diffraction of heteroepitaxial structures

Paul F. Fewster

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 946 KB

english, 1991

7

Transmission electron microscopy of heteroepitaxial layer structures

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 1.28 MB

english, 1991

8

Control of MBE, MOMBE and CBE growth using RHEED

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 419 KB

english, 1991

9

Soft X-ray photoelectron spectroscopy of compound semiconductor surfaces and interfaces

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 636 KB

english, 1991

10

Secondary ion mass spectrometry of dopants and impurities in compound semiconductors: Depth profiling of homo- and heterostructure

C. Grattepain, A.M. Huber

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 814 KB

english, 1991

11

Electrical and optical defect spectroscopy of compound semiconductors

H.G. Grimmeiss, M. Kleverman

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 836 KB

english, 1991

12

Subpicosecond luminescence spectroscopy of heterostructures

Benoît Deveaud

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 148 KB

english, 1991

13

Far-infrared spectroscopy of impurities in semiconductors

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 632 KB

english, 1991

14

Micro-Raman spectroscopy for characterization of semiconductor devices

Gerhard Abstreiter

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 392 KB

english, 1991

15

Raman spectroscopy for impurity characterization in III–V semiconductors

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 507 KB

english, 1991

16

Modelling interdiffusion in epitaxial multilayer structures using X-ray simulation techniques

J.H.C. Hogg, D. Shaw, D.M. Staudte

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 286 KB

english, 1991

17

Characterization of (In,Ga)As/GaAs strained-layer multiple quantum wells with high-resolution X-ray diffraction and computer simulations

R. Zaus, M. Schuster, H. Göbel, J.-P. Reithmaier

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 315 KB

english, 1991

18

Assessment of mismatched epitaxial layers by X-ray rocking curve measurements and simulations

N. Herres, G. Bender, G. Neumann

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 292 KB

english, 1991

19

A combination of high-resolution X-ray diffractometry and diffraction imaging techniques applied to the study of MOVPE-grown CdxHg1−xTe/CdTe on GaAs

A.M. Keir, S.J. Barnett, J. Giess, T.D. Walsh, M.G. Astles

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 460 KB

english, 1991

20

Interface roughness of GaAs/AlAs superlattices MBE-grown on vicinal surfaces

P. Auvray, A. Poudoulec, M. Baudet, B. Guenais, A. Regreny, C. d'Anterroches, J. Massies

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 450 KB

english, 1991

21

TEM study of the origin of the surface microroughness in DSL photoetched Si-implanted GaAs wafers

C. Frigeri, J.L. Weyher, M. De Potter

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 733 KB

english, 1991

22

TEM in-situ observation of recombination-enhanced mobility of dislocations in II–VI compounds

C. Levade, J.J. Couderc, G. Vanderschaeve, D. Caillard, A. Couret

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

23

Investigation of surface and sub-surface defects on polished InP substrates using auger electron spectroscopy coupled to argon ion sputtering

P. Ossart, E.V.K. Rao

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 771 KB

english, 1991

24

High-depth-resolution SIMS analysis for InGaAs/InP interfaces

Y. Gao, I. Ardelean, D. Renard, B. Rose, Y. Jin

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

25

Optimization of Zn dopant profiles in a pin-diode/FET by combination of depth profiling techniques: a SIMS, ECV and AES study

J.G. Bauer, R. Treichler, T. Hillmer, J. Müller, G. Ebbinghaus

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 284 KB

english, 1991

26

Improved method for depth profiling of multilayer structures

T.S. Horányi, P. Tüttö, G. Endrédi

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 355 KB

english, 1991

27

A new, fast method for the computer simulation of CV profiles in multilayer structures

J.S. Rimmer, M. Missous, A.R. Peaker

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 329 KB

english, 1991

28

Characterization of Cd implanted and annealed GaAs and InP by perturbed angular correlation (PAC) spectroscopy

W. Pfeiffer, M. Deicher, R. Keller, R. Magerle, P. Pross, H. Skudlik, Th. Wichert, H. Wolf, D. Forkel, N. Moriya, R. Kalish

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 358 KB

english, 1991

29

Defects in CdS: In detected by perturbed angular correlation spectroscopy (PAC)

R. Magerle, M. Deicher, U. Desnica, R. Keller, W. Pfeiffer, F. Pleiter, H. Skudlik, Th. Wichert

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 386 KB

english, 1991

30

Microscopical studies at cadmium impurities in compound semiconductors

A. Baurichter, M. Deicher, S. Deubler, D. Forkel, J. Meier, H. Wolf, W. Witthuhn

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 264 KB

english, 1991

31

Structural defect recovery in GaP after heavy ion implantation

S.G. Jahn, H. Hofsäss, U. Wahl, S. Winter, E. Recknagel

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 253 KB

english, 1991

32

Hydrogen depth profile measurement in a-Si1-xCx:H films by elastic recoil detection

V.Kh. Kudoyarova, G.M. Gusinsky, L.A. Rassadin, I.V. Kudryavtsev

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 285 KB

english, 1991

33

Carbon analysis in CdTe by nuclear activation

H. Chibani, J.P. Stoquert, M. Hage-Ali, J.M. Koebel, M. Abdesselam, P. Siffert

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 208 KB

english, 1991

34

Combined application of SEM-CL and SEM-EBIC for the investigation of compound semiconductors

J. Schreiber, W. Hergert, S. Hildebrandt

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 258 KB

english, 1991

35

Intensity variations in the near-band-edge recombination of GaP epitaxial layers, grown on (111) and (001) oriented substrates, as observed by cathodoluminescence imaging

A. Gustafsson, S. Nilsson, L. Samuelson

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 724 KB

english, 1991

36

Cathodoluminescence investigations of RIE-induced defects in InP

B.L. Chen, M. Eckstein, H.-U. Habermeier

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 384 KB

english, 1991

37

Ultrahigh resolution characterisation of compound semiconductors using pulsed laser atom probe techniques

R.A.D. Mackenzie, J.A. Liddle, C.R.M. Grovenor

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 702 KB

english, 1991

38

Inductively coupled plasma—atomic emission spectrometry (ICP-AES): an analytical technique for the chemical characterization of perovskite ceramic semiconductors

J.C. Fariñas, M.F. Barba

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 309 KB

english, 1991

39

A study of structural properties of bulk double-doped InP by laser scattering tomography and photoetching

R. Fornari, N. Tchandjou, P. Gall, J.M. Lussert

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 486 KB

english, 1991

40

Computing errors in Fourier transform photoluminescence

A. Antolini, C. Lamberti

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 269 KB

english, 1991

41

Theoretical basis for the quantitative characterization of impurities in n-type III–V compound semiconductors by photoelectromagnetic spectroscopy

S.D. Baranovskii

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 232 KB

english, 1991

42

Characterization of si-GaAs wafer quality by room-temperature photoluminescence

M. Baumgartner, K. Löhnert

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 482 KB

english, 1991

43

Ambient and low temperature photoluminescence topography of GaAs subtrates, epitaxial and implanted layers

Z.M. Wang, J. Windscheif, D.J. As, W. Jantz

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 455 KB

english, 1991

44

Effect of substrate orientation on the defect-induced bound exciton emissions in GaAs grown by molecular beam epitaxy

Nobukazu Ohnishi, Yunosuke Makita, Akimasa Yamada, Hisao Asakura, Tokue Matsumori

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 304 KB

english, 1991

45

Spatial investigation of an iron-doped indium phosphide ingot

H. L'Haridon, P.N. Favennec, R. Coquille, M. Salvi, M. Gauneau, Y. Le Guillou, R. Callec, P. Gall

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 882 KB

english, 1991

46

Neutron transmutation doping of GaP: optical studies

B.J. Heijmink Liesert, M. Godlewski, T. Gregorkiewicz, C.A.J. Ammerlaan

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 232 KB

english, 1991

47

Photoluminescence study of proton-implanted InP1−xAsx:Yb

J. Tatarkiewicz, A. Kozanecki, Z. Kaliński, K. Paprocki

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 405 KB

english, 1991

48

Complex formation in Mn-doped GaP samples

Teresa Monteiro, Estela Pereira

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 223 KB

english, 1991

49

Three-center Auger effect and the quantum yield of the luminescence of ZnS-based phosphors

A. Zakrzewski, M. Godlewski

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 232 KB

english, 1991

50

Analysis of impurity distribution in n-GaAs layers by photoconductivity and cyclotron resonance measurements

G. Strasser, S. Dubois, M. Besson, E. Gornik, G. Weimann, E. Bauser, H. Riechert

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 214 KB

english, 1991

51

Post-transit-time analysis of time-of-flight photocurrents

S. Usala, G.J. Adriaenssens, Ö. Öktü, M. Nesladek

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 246 KB

english, 1991

52

Time-evolution of low-temperature photoconductivity and hall mobility in semi-insulating GaAs

Dunja I. Desnica, B. S̆antić, U.V. Desnica

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 240 KB

english, 1991

53

Interstitial Mn as a new donor in GaP and GaAs: an EPR study

S.J.C.H.M. van Gisbergen, M. Godlewski, T. Gregorkiewicz, C.A.J. Ammerlaan

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 253 KB

english, 1991

54

Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR

T. Benchiguer, E. Christoffel, A. Goltzené, B. Mari, B. Meyer, C. Schwab

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 275 KB

english, 1991

55

Investigation of reactive ion etch-induced damage in InP surfaces using a noncontact photothermal radiometric probe

G.M. Crean, P.A.F. Herbert, I. Little, W.M. Kelly, J.Y. Marzin, A. Izrael, B. Jusserand

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 212 KB

english, 1991

56

Semiconductor electrical properties from the frequency dependence of the dielectric constant: application to n-type ZnSe heteroepitaxial thin films

A. Deneuville, D.B. Tanner, R.M. Park, P.H. Holloway

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 259 KB

english, 1991

57

Reactive-ion-etch damage in GaAs processing evaluated by a microwave absorption technique

Hans P. Zappe, Gudrun Kaufel

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 321 KB

english, 1991

58

Free-carrier concentration in n-doped InP crystals determined by Raman scattering measurements

B. Boudart, B. Prévot, C. Schwab

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 295 KB

english, 1991

59

Characterization of III–V compounds by quasi-elastic electronic scattering of light

B.H. Bairamov, V.A. Voitenko, I.P. Ipatova, V.V. Toporov, G. Irmer, J. Monecke, E. Jahne

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 181 KB

english, 1991

60

Determination of elastic properties of Si/Ge superlattices and Si1-xGex films from surface acoustic modes by Brillouin scattering

M. Mendik, M. Ospelt, H. von Känel, P. Wachter

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 306 KB

english, 1991

61

O implantation in ZnSe: lattice distortion by Raman measurement

A. Deneuville, C.H. Park, P. Ayyub, T. Anderson, P. Lowen, K. Jones, P.H. Holloway

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 256 KB

english, 1991

62

Raman characterization of passivated GaAs surfaces

G.M. O'Connor, C.J. McDonagh, F.G. Anderson, T.J. Glynn, G.P. Morgan, G.J. Hughes, L. Roberts, M.O. Henry

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 254 KB

english, 1991

63

Confined optical vibrations: a new probe for alloy disorder

Bernard Jusserand, Francis Mollot

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 249 KB

english, 1991

64

Resonant Rayleigh scattering from excitons in CdxZn1−xTe:ZnTe quantum wells: measurement of homogeneous linewidths

J.F. Donegan, J.P. Doran, R.P. Stanley, J. Hegarty, R.D. Feldman, R.F. Austin

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 252 KB

english, 1991

65

Electro-optic sampling of surface space-charge fields on III–V compounds

W. Kütt, G.C. Cho, M. Strahnen, H. Kurz

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 332 KB

english, 1991

66

Physical characterization of OMVPE-grown AlxGa1-xAs multi-layer films by means of non-destructive optical reflectometry

Pieter L. Swart, Beatrys M. Lacquet, Rajan Thavar

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 443 KB

english, 1991

67

Picosecond transient photoreflectance measurements of ion-implanted GaAs

Steven C. Moss, John F. Knudsen, Robert C. Bowman Jr., Paul M. Adams, Duane D. Smith

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 323 KB

english, 1991

68

Reflectometry-aided surface layer investigation

K. Jezierski, Z. Gumienny, J. Misiewicz

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 247 KB

english, 1991

69

Non-destructive characterisation of (Ga,In,Al,As,P)-based ternary multilayer structures using spectroscopic ellipsometry

C. Pickering, N.S. Garawal, D. Lancefield, J.P. Piel, R. Blunt

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 359 KB

english, 1991

70

Alloy disorder effects in III–V ternaries studied by modulation spectroscopy

A. Dimoulas, A. Derekis, G. Kyriakidis, A. Christou

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 411 KB

english, 1991

71

Determination of ion beam etching damage on InP by spectroscopic ellipsometry

H.W. Dinges, B. Kempf, H. Burkhard, R. Göbel

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 270 KB

english, 1991

72

Infrared absorption of n- and p-type Fe-doped InP and mapping of the Fe distribution

F. Mosel, A. Seidl, D. Hofmann, G. Müller

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 475 KB

english, 1991

73

Two-wavelength transmission: a rapid and precise method for measuring the light absorption in semiconductors

B. Sartorius, M. Brandstättner, H. Venghaus

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 261 KB

english, 1991

74

Single-beam thermowave analysis of semiconductors

M. Wagner, N. Winkler, H.D. Geiler

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 301 KB

english, 1991

75

Microscopic defect level characterization of semi-insulating compound semiconductors by TSC and PICTS: Application to the effect of hydrogen in CdTe

M. Hage-Ali, B. Yaacoub, S. Mergui, M. Samimi, B. Biglari, P. Siffert

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 296 KB

english, 1991

76

Long-term stability of InP MIS devices

J. Tardy, I. Thomas, P. Viktorovitch, M. Gendry, J.L. Perrossier, C. Santinelli, M.P. Besland, P. Louis, G. Post

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 387 KB

english, 1991

77

Hydrogen passivation and reactivation of shallow Zn acceptors in GaAs

A.W.R. Leitch, Th. Prescha, M. Stutzmann

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 311 KB

english, 1991

78

An investigation of photo-quenching properties of LEC GaAs by using optical and electrical techniques

S. Tüzemen, M.R. Brozel

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 315 KB

english, 1991

79

The influence of the DX center on the capacitance of schottky barriers in n-type AlGaAs

C. Ghezzi, R. Mosca, A. Bosacchi, S. Franchi, E. Gombia

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 345 KB

english, 1991

80

Analysis of electron mobility versus temperature after photoexcitation in Si-doped AlxGa1−xAs

A. Baraldi, C. Ghezzi, A. Parisini, A. Bosacchi, S. Franchi

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 378 KB

english, 1991

81

Carrier and mobility profile measurements in n-type ion-implanted GaAs by the differential sheet resistivity and Hall effect technique

R. Nipoti, D. Pocci, A. Cetronio, C. Lanzieri

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 336 KB

english, 1991

82

Electrical properties of neutron-transmutation-doped InSe

B. Mari, A. Segura, A. Chevy

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 343 KB

english, 1991

83

Landau oscillations in single quantum wells observed by microwave detection

B. Meyer, P. Omling, P. Emanuelsson

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 255 KB

english, 1991

84

An investigation of metal/GaAs(100) interfaces by deep level transient spectroscopy

L. Roberts, G. Hughes

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 334 KB

english, 1991

85

Characterization of alloy composition in Ga1-xAlxAs/GaAs structures: comparison of photovoltage, X-ray, SIMS and RHEED techniques

D. Lee, S.J. Barnett, A.D. Pitt, M.R. Houlton, G.W. Smith

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 313 KB

english, 1991

86

GaSb/GaAs heteroepitaxy characterized as a stress-free system

Claude Raisin, André Rocher, Georges Landa, Robert Carles, Louis Lassabatere

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 688 KB

english, 1991

87

The relationship between electrical and structural characteristics of CdTe and CdMnTe layers grown on InSb

D. Ashenford, J.H.C. Hogg, B. Lunn, C.G. Scott

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 283 KB

english, 1991

88

The molecular beam epitaxial growth of GaAs(111)/Si(111): a variable growth temperature study

D.A. Woolf, D.I. Westwood, M.A. Anderson, R.H. Williams

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 336 KB

english, 1991

89

Strain and defect densities in Si/Si1-xGex heterostructures investigated by ion scattering and X-ray diffraction

B. Holländer, S. Mantl, B. Stritzker, F. Schäffler, H.-J. Herzog, E. Kasper

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 459 KB

english, 1991

90

Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers

R. Schwarz, T. Fischer, P. Hanesch, T. Muschik, J. Kolodzey, H. Cerva, H.L. Meyerheim, B.M.U. Scherzer

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 544 KB

english, 1991

91

Correlated use of characterization techniques to optimize the Mg implantation annealing for self-aligned HBT's

V. Amarger, C. Dubon-Chevallier, A.C. Papadopoulo, B. Descouts, Y. Gao

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 275 KB

english, 1991

92

Electrical characterization of argon-ion sputtered n-GaAs

L.J. Bredell, F.D. Auret, G. Myburg, W.O. Barnard

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 302 KB

english, 1991

93

Combined application of spreading-resistance and electron-microprobe depth profiling on GaAs:Zn and Si:P

H.-G. Hettwer, W. Lerch, B. Lentfort, N.A. Stolwijk, H. Mehrer

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 350 KB

english, 1991

94

Dislocation density, infrared absorption and cathodoluminescence mapping of microstructure associated with dislocation cells in semi-insulating LEC GaAs

M.R. Brozel, L. Breivik, D.J. Stirland, G.M. Williams, A.G. Cullis

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 548 KB

english, 1991

95

Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots

W. Jantz, R. Stibal, J. Windscheif, J. Wagner

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 285 KB

english, 1991

96

Evaluation of the diffusion length of minority carriers in bulk GaAs

A. Castaldini, A. Cavallini, E. Gombia, R. Mosca, L. Tarricone

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 647 KB

english, 1991

97

Identification of the double and single acceptor state of isolated NiGa in GaAs

N. Hizem, G. Bremond, L. Mayet, M. Gavand, J. Gregoire, G. Guillot, W. Ulrici

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 409 KB

english, 1991

98

Complete identification of the Ti-related levels in GaP

P. Roura, J.R. Morante, G. Bremond, T. Benyattou, G. Guillot, W. Ulrici

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 239 KB

english, 1991

99

Electronic properties and band structure of IrSe2

M. Morsli, A. Bonnet, Y. Tregouet, A. Conan, S. Jobic, R. Brec

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 325 KB

english, 1991

100

Comparison of pyrite thin films obtained from Fe and natural pyrite powder

C. De las Heras, I.J. Ferrer, C. Sánchez

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 642 KB

english, 1991

101

Author index

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 494 KB

english, 1991

102

Subject index

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 1.41 MB

english, 1991