Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium
H. Ohno, S. Goto, Y. Nomura, Y. Morishita, Y. KatayamaVolume:
82-83
Year:
1994
Pages:
7
DOI:
10.1016/0169-4332(94)90213-5
File:
PDF, 415 KB
1994