Kinetics and mechanism of atomic layer epitaxy of GaAs...

Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

H. Ohno, S. Goto, Y. Nomura, Y. Morishita, Y. Katayama
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Volume:
82-83
Year:
1994
Pages:
7
DOI:
10.1016/0169-4332(94)90213-5
File:
PDF, 415 KB
1994
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