Volume 82-83; Issue none

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Applied Surface Science
Volume 82-83; Issue none

Applied Surface Science

Volume 82-83; Issue none

1

Editorial Board

Journal:

Applied Surface Science

Year:

1994

File:

PDF, 47 KB

1994

2

Preface

Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 134 KB

english, 1994

3

Molecular layer epitaxy of GaAs

Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 521 KB

english, 1994

4

Recent advances in atomic layer epitaxy devices

S.M. Bedair, N.A. El-Masry

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 583 KB

english, 1994

5

Silicon doping with modulated beam epitaxy in the growth of GaAs(111)A

M.R. Fahy, K. Sato, B.A. Joyce

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 367 KB

english, 1994

6

Atomic layer epitaxy of device quality AlGaAs and AlAs

N. Hayafuji, G.M. Eldallal, A. Dip, P.C. Colter, N.A. El-Masry, S.M. Bedair

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 475 KB

english, 1994

7

Substrate misorientation dependence of thermal stability of Si atom in Si atomic layer doped GaAs on GaAs(111)A

M. Hirai, H. Ohnishi, K. Fujita, T. Watanabe

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 641 KB

english, 1994

8

Investigation of a GaN surface structure for the mask of GaAs selective growth using MOMBE

Seikoh Yoshida, Masahiro Sasaki

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.29 MB

english, 1994

9

Atomic layer epitaxy growth of doped zinc oxide thin films from organometals

Vesa Lujala, Jarmo Skarp, Markku Tammenmaa, Tuomo Suntola

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 826 KB

english, 1994

10

Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application

Yutaka Oyama, Piotr Plotka, Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 460 KB

english, 1994

11

Pulsed-jet epitaxy: Application to device processes

Y. Sakuma, M. Ozeki, N. Ohtsuka, Y. Matsumiya, H. Shigematsu, O. Ueda, S. Muto, K. Nakajima, N. Yokoyama

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.82 MB

english, 1994

12

Surface processes of selective growth by atomic layer epitaxy

Hideo Isshiki, Yoshinobu Aoyagi, Takuo Sugano, Sohachi Iwai, Takashi Meguro

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 784 KB

english, 1994

13

Epitaxial growth of a two-dimensional structure of GaP on a Si substrate by metalorganic chemical vapor deposition

Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.75 MB

english, 1994

14

Migration and related buried epitaxy using digital epitaxial growth conditions

Ichiro Takahashi, Motonari Nakaji, Hideo Kawanishi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 709 KB

english, 1994

15

Growth temperature dependence of optical properties of gas source MBE grown GaP/AlP short period superlattices

J.H. Kim, H. Asahi, K. Asami, K. Iwata, S.G. Kim, S. Gonda

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 331 KB

english, 1994

16

Fabrication of smooth facets of InP by selective sidewall epitaxy using CBE

M. Gotoda, H. Sugimoto, S. Maruno, T. Isu, W. Susaki, M. Nunoshita

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 699 KB

english, 1994

17

Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

Shih-Hsiung Chan, Simon Ming Sze, Chun-Yen Chang, Wei-I Lee

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 567 KB

english, 1994

18

Ideal static induction transistor implemented with molecular layer epitaxy

Piotr Płotka, Toru Kurabayashi, Yutaka Oyama, Jun-ichi Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 529 KB

english, 1994

19

Temperature synchronized molecular layer epitaxy

T. Kurabayashi, J. Nishizawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 539 KB

english, 1994

20

Autocompensation in Si planar doped GaAs

Takamasa Suzuki, Hideo Goto, Nobuhiko Sawaki, Hiroshi Ito, Kunihiko Hara

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 446 KB

english, 1994

21

Optical properties of atomic layer grown InAs/AlSb quantum well structures by gas source migration enhanced epitaxy

H. Asahi, S.G. Kim, M. Seta, K. Asami, H. Watanabe, T. Ogura, S. Gonda

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 519 KB

english, 1994

22

Microscopic analysis of interface structure in InGaAs/InP MQW using Pendellösung oscillation around a satellite peak in high-resolution X-ray diffraction

M. Takemi, T. Kimura, K. Mori, K. Goto, Y. Mihashi, S. Takamiya

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 666 KB

english, 1994

23

Growth of In2S3 thin films by atomic layer epitaxy

T. Asikainen, M. Ritala, M. Leskelä

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 679 KB

english, 1994

24

Flow modulation epitaxy of GaxIn1-xAs/AlAs heterostructures on InP for resonant tunneling diodes

B.P. Keller, J.C. Yen, A.L. Holmes Jr., S.P. DenBaars, U.K. Mishra

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.24 MB

english, 1994

25

AlAs layers with low carbon content grown by ALE using ethyldimethylamine alane as a new aluminum source

N. Kano, S. Hirose, K. Hara, J. Yoshino, H. Munekata, H. Kukimoto

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 367 KB

english, 1994

26

Comparative study between MEE- and MBE-grown InSb-nanocrystals on Se-terminated GaAs(001)

Yoshio Watanabe, Fumihiko Maeda, Masaharu Oshima

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 933 KB

english, 1994

27

Surface diffusion and adatom stoichiometry in GaAs MBE studied by microprobe-RHEED/SEM MBE

T. Nishinaga, X.Q. Shen

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 572 KB

english, 1994

28

Role of a metalorganic As source in atomic layer epitaxy of GaAs and AlAs

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 713 KB

english, 1994

29

Self-limiting and step-propagating nature of GaAs atomic layer epitaxy revealed by atomic force microscopy

Haruki Yokoyama, Masafumi Tanimoto, Masanori Shinohara, Naohisa Inoue

Journal:

Applied Surface Science

Year:

1994

File:

PDF, 2.01 MB

1994

30

Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

H. Ohno, S. Goto, Y. Nomura, Y. Morishita, Y. Katayama

Journal:

Applied Surface Science

Year:

1994

File:

PDF, 415 KB

1994

31

Surface stoichiometry and the role of adsorbates during GaAs atomic layer epitaxy

J.Randall Creighton

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 827 KB

english, 1994

32

Activation of the Ga-CH3 bond using atomic hydrogen - a possible route to III–V semiconductors films with low carbon levels

J.T. Yates Jr., A. Hübner, S.R. Lucas, W.D. Partlow, J. Schaefer, W.J. Choyke

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 921 KB

english, 1994

33

Control of the etching reaction of digital etching using tunable UV laser irradation

T. Meguro, M. Ishii, T. Sugano, K. Gamo, Y. Aoyagi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 557 KB

english, 1994

34

Theoretical studies on the chloride ALE process

Yuji Mochizuki, Toshikazu Takada, Akira Usui

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 921 KB

english, 1994

35

A Monte Carlo simulation study for adatom migration and resultant atomic arrangements in AlxGa1−xAs on a GaAs(001) surface

Tomonori Ito, Kenji Shiraishi, Takahisa Ohno

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 520 KB

english, 1994

36

Configurational atomic ordering caused by stochastic adsorption processes in MBE-grown alloy semiconductors

Hiroshi Nakayama, Makoto Tochigi, Hidefumi Maeda, Taneo Nishino

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 786 KB

english, 1994

37

In-situ monitoring of 1st-order phase transition on InAs(001) surfaces by scanning electron surface microscopy

Hiroshi Yamaguchi, Yoshikazu Homma, Yoshiji Horikoshi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.40 MB

english, 1994

38

Optical in-situ analysis of GaAs/AlAs/GaAs and GaAs/(Al)GaAs/GaAs atomic layer growth using GaCl3, AlCl3 and AsH3

M. Akamatsu, S. Narahara, T. Kobayashi, F. Hasegawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 422 KB

english, 1994

39

Atomic layer epitaxy of AlAs: Growth mechanism

M. Ozeki, N. Ohtsuka

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 534 KB

english, 1994

40

A solution to the surface arsenic stoichiometric problem at the GaAs(001) growth surface in atomic layer expitaxy

Yoshiki Sakuma, Shunichi Muto, Kazuo Nakajima, Naoki Yokoyama

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 990 KB

english, 1994

41

X-ray photoelectron spectroscopic and atomic force microscopic study of GaAs etching with a HCl solution

Zhen Song, Satoshi Shogen, Masahiro Kawasaki, Ikuo Suemune

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 963 KB

english, 1994

42

Substitution of surface-adsorbed As atoms to P atoms in atomic layer epitaxy

Hitoshi Ikeda, Yoshiki Miura, Naoyuki Takahashi, Akinori Koukitu, Hisashi Seki

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 480 KB

english, 1994

43

In-situ observation of Ga adsorption during TMGa exposure on GaAs(001) surfaces with various As coverages

Shigeyuki Otake, Akira Sakamoto, Masateru Yamamoto, Izumi Iwasa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 466 KB

english, 1994

44

Pulsed trimethylgallium scattering from As-stabilized and Ga-stabilized surfaces

Masahiro Sasaki, Seikoh Yoshida

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 757 KB

english, 1994

45

Surface reactions of Ga and As on Sb-terminated GaAs(001)

Fumihiko Maeda, Yoshio Watanabe, Masaharu Oshima

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.21 MB

english, 1994

46

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 437 KB

english, 1994

47

Real time observation of surface dielectric responses of GaAs(001) using surface photo-absorption

Kunihiko Uwai, Naoki Kobayashi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 588 KB

english, 1994

48

Atomic layer epitaxy of ZnSe using reflectance difference spectroscopy

H. Akinaga, K. Tanaka

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.54 MB

english, 1994

49

CO adsorption on clean and atomic-layer-Cu-covered ZnO(101̄0) surfaces

Qingfeng Ge, Preben J. Møller

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 348 KB

english, 1994

50

Chlorine adsorption on electron beam irradiated GaAs photo-oxides: mechanism of in situ EB lithography

Yuichi Ide, Masamichi Yamada

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 519 KB

english, 1994

51

Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method

Akihiko Yoshikawa, Masakazu Kobayashi, Shigeru Tokita

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 549 KB

english, 1994

52

Hydrogen atom assisted ALE of silicon

Shigeru Imai, Masakiyo Matsumura

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 430 KB

english, 1994

53

Photoelectron intensity oscillation as a probe to monitor Si layer-by-layer growth

Yoshiharu Enta, Nobuo Miyamoto, Yuji Takakuwa, Hiroo Kato

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 427 KB

english, 1994

54

Sub-atomic-layer epitaxy of Si using Si2H6

Yoshiyuki Suda, Masahiro Ishida, Mitsutomi Yamashita, Hiroaki Ikeda

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 534 KB

english, 1994

55

Suppression of HBO2 and Sb adsorption on thin-oxide-covered, H-terminated, or Sb-terminated Si(100) surfaces

E. Murakami, H. Kujirai, S. Kimura

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 447 KB

english, 1994

56

Si ALE using chlorine/hydrogen exchange. Fundamentals and films

D.D. Koleske, S.M. Gates

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 292 KB

english, 1994

57

Self-limiting adsorption of thermally cracked SiCl2H2 on Si surfaces

C. Sasaoka, A. Usui

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 786 KB

english, 1994

58

Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases

Masao Sakuraba, Junichi Murota, Takeshi Watanabe, Yasuji Sawada, Shoichi Ono

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 377 KB

english, 1994

59

Adaptive temperature program ALE of Si1 − xGex/Si heterostructures from Si2H6/Ge2H6

S. Asami, N.M. Russell, A. Mahajan, P.A. Steiner IV, D.J. Bonser, J. Fretwell, S. Bannerjee, A. Tasch, J.M. White, J.G. Ekerdt

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.09 MB

english, 1994

60

Scanning tunneling microscopy study of solid-phase epitaxy processes of amorphous silicon layers on silicon substrates

Katsuhiro Uesugi, Takuji Komura, Masamichi Yoshimura, Takafumi Yao

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 2.23 MB

english, 1994

61

Scanning tunneling microscopy observations of Ge solid-phase epitaxy on Si(111)

H. Hibino, T. Ogino

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 3.08 MB

english, 1994

62

Atomic layer epitaxy of germanium

Satoshi Sugahara, Takuya Kitamura, Shigeru Imai, Masakiyo Matsumura

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 836 KB

english, 1994

63

Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)

M. Sasaki, T. Abukawa, H.W. Yeom, M. Yamada, S. Suzuki, S. Sato, S. Kono

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.17 MB

english, 1994

64

Temperature effects on synchrotron-radiation-excited Si atomic layer epitaxy using disilane

Journal:

Applied Surface Science

Year:

1994

File:

PDF, 1.60 MB

1994

65

Mechanisms of SiC growth by alternate supply of SiH2Cl2 and C2H2

Hiroyuki Nagasawa, Yoh-ichi Yamaguchi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 349 KB

english, 1994

66

Isothermal H2 desorption kinetics from Si(100) 2 × 1: dependence on disilane and atomic hydrogen precursors

L.A. Okada, M.L. Wise, S.M. George

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 623 KB

english, 1994

67

Low temperature adsorption of hydrogen on Si(111) and (100) surfaces studied by elastic recoil detection analysis

Michio Watamori, Masamichi Naitoh, Hajime Morioka, Yasuhiro Maeda, Kenjiro Oura

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 384 KB

english, 1994

68

Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation

Koji Suzue, Takashi Matsuura, Junichi Murota, Yasuji Sawada, Tadahiro Ohmi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 443 KB

english, 1994

69

Atomic-scale modification of the AlCl3-adsorbed Si(111)-7 × 7 surface

Takaharu Takiguchi, Katsuhiro Uesugi, Masamichi Yoshimura, Takafumi Yao

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 2.12 MB

english, 1994

70

Chemical reactivity of the Si(111) (3×3) R30°-B surface: An electron-energy-loss spectroscopy study

Y. Taguchi, M. Daté, N. Takagi, T. Aruga, M. Nishijima

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 263 KB

english, 1994

71

Scanning tunneling microscope observations of Si(111)3 × 1-Ag and 6 × 1-Ag structures

Hideaki Ohnishi, Yasuji Yamamoto, Itsuo Katayama, Yasuyuki Ohba, Kenjiro Oura

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1003 KB

english, 1994

72

Temperature-programmed-desorption study of the process of atomic deuterium adsorption onto Si(100)2×1

M. Suemitsu, H. Nakazawa, N. Miyamoto

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 425 KB

english, 1994

73

Atomic layer epitaxy in the growth of complex thin film structures for electroluminescent applications

Lauri Niinistö, Markku Leskelä

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 479 KB

english, 1994

74

Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB… binary reaction sequence chemistry

S.M. George, O. Sneh, A.C. Dillon, M.L. Wise, A.W. Ott, L.A. Okada, J.D. Way

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 742 KB

english, 1994

75

NbCl5 as a precursor in atomic layer epitaxy

Kai-Erik Elers, Mikko Ritala, Markku Leskelä, Eero Rauhala

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 702 KB

english, 1994

76

Atomic force microscopic study of directional SrSO4(001) surface and its etching property

Akihiro Seo, Hitoshi Shindo

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.98 MB

english, 1994

77

In situ ellipsometric diagnostics for controlled growth of metal oxides with surface chemical reactions

Hiroshi Kumagai, Koichi Toyoda

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 435 KB

english, 1994

78

Layer controlled growth of oxide superconductors

Maki Kawai, Z.-Y. Liu, T. Hanada, M. Katayama, M. Aono, C.F. McConville

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 825 KB

english, 1994

79

Preparation of ultra-flat YBCO thin films by MOCVD layer-by-layer deposition

Masato Matsubara, Izumi Hirabayashi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.54 MB

english, 1994

80

Fabrication of CuO2-plane-based high-temperature superconducting thin films by atomic layer controlled molecular beam epitaxy

I. Yoshida, H. Furukawa, T. Hirosawa, M. Nakao

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 849 KB

english, 1994

81

Morphology of epitaxial SrF2 films on atomically modified InP(100)

S. Heun, M. Sugiyama, S. Maeyama, Y. Watanabe, M. Oshima

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 3.00 MB

english, 1994

82

Steric and electronic interactions between source gas and substrate surface during the Al-CVD/Al selective epitaxy process as investigated by quantum chemical calculations

R. Vetrivel, R. Yamauchi, H. Yamano, M. Kubo, A. Miyamoto, T. Ohta

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 739 KB

english, 1994

83

Surface modification of CaF2 in atomic layer scale by electron beam exposure

S.M. Hwang, A. Izumi, K. Tsutsui, S. Furukawa

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 382 KB

english, 1994

84

Structural study of SrTiO3(100) surfaces by low energy ion scattering

Yasunori Tanaka, Hideki Morishita, Michio Watamori, Kenjiro Oura, Itsuo Katayama

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 474 KB

english, 1994

85

Surface structure dependence of O2—W adsorption system

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.10 MB

english, 1994

86

Observation of the interface of Ba/Si(100) by MDS and TDS

Shozo Hongo, Kaoru Ojima, Shinichi Taniguchi, Toshio Urano, Toru Kanaji

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 466 KB

english, 1994

87

Theoretical estimation of ordered metal species in zeolite pores

Hiroaki Himei, Eiji Maruya, Momoji Kubo, Rajappan Vetrivel, Akira Miyamoto

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 480 KB

english, 1994

88

Surface coverage of ALE precursors on oxides

Suvi Haukka, Eeva-Liisa Lakomaa, Tuomo Suntola

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 443 KB

english, 1994

89

The effect of growth parameters on the deposition of CaS thin films by atomic layer epitaxy

J. Rautanen, M. Leskelä, L. Niinistö, E. Nykänen, P. Soininen, M. Utriainen

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 508 KB

english, 1994

90

Formation processes of ultrafine metal particles on MgO(100) as investigated by molecular dynamics and computer graphics

Momoji Kubo, Ryo Yamauchi, Rajappan Vetrivel, Akira Miyamoto

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.07 MB

english, 1994

91

Oxidation of TiN thin films in an ion-beam-assisted deposition process

Hiroshi Kubota, Masanori Nagata, Ryuji Miyagawa, Marc Aurele Nicolet

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 341 KB

english, 1994

92

Influence of atomic Cu-layer epitaxy on Co2 and CO phtoinduced desorption from ZnO(0001)

P.J. Møller, S.A. Komolov, E.F. Lazneva

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 594 KB

english, 1994

93

Growth of extra-thin ordered aluminum films on Si(111) surface

E.A. Khramtsova, A.V. Zotov, A.A. Saranin, S.V. Ryzhkov, A.B. Chub, V.G. Lifshits

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.01 MB

english, 1994

94

Electrical properties of Si—Al2O3 structures grown by ML-ALE

V.E. Drozd, A.P. Baraban, I.O. Nikiforova

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 277 KB

english, 1994

95

Synthesis of oxide superalloys by ML-ALE method

V.E. Drozd, A.A. Tulub, V.B. Aleskovski, D.V. Korol'kov

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 278 KB

english, 1994

96

Synthesis of conducting oxides by ML-ALE

V.E. Drozd, V.B. Aleskovski

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 314 KB

english, 1994

97

Author index

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 581 KB

english, 1994

98

Subject index

Journal:

Applied Surface Science

Year:

1994

File:

PDF, 1.52 MB

1994

99

Boron δ-doping in Si using atmospheric pressure CVD

Yukihiro Kiyota, Tohru Nakamura, Taroh Inada

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 351 KB

english, 1994

100

Adsorption and desorption of H2O on potassium precovered Si(100)2 × 1 surface

Shozo Hongo, Shinichi Taniguchi, Kaoru Ojima, Toshio Urano, Toru Kanaji

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 546 KB

english, 1994

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