Sub-atomic-layer epitaxy of Si using Si2H6

Applied Surface Science 1994 Vol. 82-83; Iss. none

Sub-atomic-layer epitaxy of Si using Si2H6

Yoshiyuki Suda, Masahiro Ishida, Mitsutomi Yamashita, Hiroaki Ikeda
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Volume:
82-83
Year:
1994
Language:
english
Pages:
6
DOI:
10.1016/0169-4332(94)90237-2
File:
PDF, 534 KB
english, 1994
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