Critical-layer thickness of a pseudomorphic In0.8Ga0.2As...

Applied Physics Letters 1991 Vol. 58; Iss. 21

Critical-layer thickness of a pseudomorphic In0.8Ga0.2As heterostructure grown on InP

Tacano, Munecazu, Sugiyama, Yoshinobu, Takeuchi, Yukihiro
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Volume:
58
Year:
1991
Language:
english
DOI:
10.1063/1.104890
File:
PDF, 630 KB
english, 1991
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