Volume 58; Issue 21

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Applied Physics Letters
Volume 58; Issue 21

Applied Physics Letters

Volume 58; Issue 21

1

Synthesis under ambient pressure of 80 K superconducting YBa2Cu4O8 powders via coprecipitation

Ho, J. S., Chang, C. T., Liu, R. S., Edwards, P. P.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 630 KB

english, 1991

2

Low-pressure growth of ZnTe by Ar laser-assisted metalorganic vapor phase epitaxy

Ogawa, Hiroshi, Nishio, Mitsuhiro, Ikejiri, Makoto, Tuboi, Hideyuki

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 567 KB

english, 1991

3

Critical-layer thickness of a pseudomorphic In0.8Ga0.2As heterostructure grown on InP

Tacano, Munecazu, Sugiyama, Yoshinobu, Takeuchi, Yukihiro

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 630 KB

english, 1991

4

Low dark current, planar In0.4Ga0.6As p-i-n photodiode prepared by molecular beam epitaxy growth on GaAs

Tzeng, Y. C., Li, S. S., Lin, Y. W., Ribas, P., Park, R. M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 587 KB

english, 1991

5

Raman analysis of Si/Ge strained-layer superlattices under hydrostatic pressure

Sui, Zhifeng, Herman, Irving P., Bevk, Joze

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 667 KB

english, 1991

6

In situ buried GaInAs/InP quantum dot arrays by selective area metalorganic vapor phase epitaxy

Galeuchet, Yvan D., Rothuizen, Hugo, Roentgen, Peter

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 745 KB

english, 1991

7

p-type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy

Hamm, R. A., Ritter, D., Temkin, H., Panish, M. B., Geva, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 659 KB

english, 1991

8

Magnetization of (100)NiFe films deposited on (100)Pd/Cu/Si(100)

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 681 KB

english, 1991

9

Extrinsic transient diffusion in silicon

Giles, Martin D.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 612 KB

english, 1991

10

Effect of waveguide uniformity on phase matching for frequency conversion in channel waveguides

Cao, Xiaofan, Natour, Jamal, Ramaswamy, Ramu V., Srivastava, Ramakant

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 670 KB

english, 1991

11

Electronic properties of semiconductor nanostructures probed by scanning tunneling microscopy

Weiner, J. S., Hess, H. F., Robinson, R. B., Hayes, T. R., Sivco, D. L., Cho, A. Y., Ranade, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 626 KB

english, 1991

12

Amorphization processes in self-ion-implanted Si: Dose dependence

Motooka, T., Holland, O. W.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 729 KB

english, 1991

13

Low-temperature electron spin resonance investigations of silicon paramagnetic defects in silicon nitride

Warren, W. L., Rong, F. C., Poindexter, E. H., Kanicki, J., Gerardi, G. J.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 687 KB

english, 1991

14

Native-oxide coupled-stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers

Richard, T. A., Kish, F. A., Holonyak, N., Dallesasse, J. M., Hsieh, K. C., Ries, M. J., Gavrilovic, P., Meehan, K., Williams, J. E.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 724 KB

english, 1991

15

Effects of high-temperature annealing on amorphous BiFeO3 with nonmagnetic substitutions

Rao, B. Uma Maheshwar, Srinivasan, G.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 616 KB

english, 1991

16

High critical current densities in epitaxial YBa2Cu3O7−δ thin films on silicon-on-sapphire

Fork, D. K., Ponce, F. A., Tramontana, J. C., Newman, N., Phillips, Julia M., Geballe, T. H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 691 KB

english, 1991

17

Role of negatively charged vacancies in secondary grain growth in polycrystalline silicon during rapid thermal annealing

Park, Keunhyung, Batra, Shubneesh, Banerjee, Sanjay

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 688 KB

english, 1991

18

High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well lasers

Offsey, S. D., Lester, L. F., Schaff, W. J., Eastman, L. F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 584 KB

english, 1991

19

Electrical properties of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures

Martin, G., Strite, S., Thornton, J., Morkoç, H.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 569 KB

english, 1991

20

High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor deposition

Khan, M. Asif, Van Hove, J. M., Kuznia, J. N., Olson, D. T.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 550 KB

english, 1991

21

In situ patterning of contamination resists in metalorganic chemical vapor deposition for fabrication of quantum wires

Takahashi, T., Arakawa, Y., Nishioka, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 567 KB

english, 1991

22

Occupancy of the DX center in n-Al0.32Ga0.68As under uniaxial stress

Wang, Zhiguo, Chung, Ki-woong, Miller, T., Williamson, F., Nathan, M. I.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 578 KB

english, 1991

23

Spatial hole burning in Nd3+-fiber lasers suppressed by push-pull phase modulation

Sabert, H., Ulrich, R.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 609 KB

english, 1991

24

Fabrication of photodiode arrays by molecular assembly technique

Yoneyama, Mitsuru, Fujii, Akiteru, Maeda, Shuichi, Murayama, Tetsuo

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 710 KB

english, 1991

25

Quantum molecular dynamics treatment for the electronic relaxation of high-density plasmas in two-dimensional structures

Joshi, R. P., Kriman, A. M., Kann, M. J., Ferry, D. K.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 596 KB

english, 1991

26

Enhanced and inhibited spontaneous emission in GaAs/AlGaAs vertical microcavity lasers with two kinds of quantum wells

Yamauchi, T., Arakawa, Y., Nishioka, M.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 612 KB

english, 1991

27

Longitudinal-optical-phonon assisted tunneling in tunneling bi-quantum well structures

Muto, Shunichi, Inata, Tsuguo, Tackeuchi, Atsushi, Sugiyama, Yoshihiro, Fujii, Toshio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 517 KB

english, 1991

28

Improved electronic properties of GaAs surfaces stabilized with phosphorus

Viktorovitch, P., Gendry, M., Krawczyk, S. K., Krafft, F., Abraham, P., Bekkaoui, A., Monteil, Y.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 594 KB

english, 1991

29

Interface between Y-Ba-Cu-O thin film and cubic zirconia substrate

Hwang, D. M., Ying, Q. Y., Kwok, H. S.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 974 KB

english, 1991

30

Second-harmonic generation transition in NaNb3O8 solid solutions

Zhang, Wei Jia, Liu, Wen, Shen, Hong Yuan

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 444 KB

english, 1991

31

Anomaly in Cp/Cv: A possible signature of a liquid-glass transition

Grimsditch, M., Rivier, N.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 579 KB

english, 1991

32

Reduced dislocation density in Ge/Si epilayers

Kvam, E. P., Namavar, F.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 619 KB

english, 1991

33

Defect reduction in GexSi1−x epitaxy by rapid thermal processing chemical vapor deposition using a low-temperature in situ preclean and a Si buffer layer

Jung, K. H., Hsieh, T. Y., Kwong, D. L.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 860 KB

english, 1991

34

Al-Ga monolayer lateral growth observed in situ by scanning electron microscopy

Kanisawa, Kiyoshi, Osaka, Jiro, Hirono, Shigeru, Inoue, Naohisa

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 589 KB

english, 1991

35

Optically controlled surface-emitting lasers

Chan, W. K., Harbison, J. P., von Lehmen, A. C., Florez, L. T., Nguyen, C. K., Schwarz, S. A.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 656 KB

english, 1991

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