High-Performance Ultrathin Body c-SiGe Channel FDSOI...

IEEE Transactions on Electron Devices 2013 / 05 Vol. 60; Iss. 5

High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: $V_{\rm th}$ Tuning, Variability, Access Resistance, and Mobility Issues

Villalon, Anthony, Le Royer, Cyrille, Cristoloveanu, Sorin, Casse, Mickael, Cooper, David, Mazurier, Jerome, Previtali, Bernard, Tabone, Claude, Perreau, Pierre, Hartmann, Jean-Michel, Scheiblin, Pasc
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2255055
Date:
May, 2013
File:
PDF, 1.20 MB
english, 2013
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