Conduction mechanisms in 2D and 3D SIS capacitors

Semiconductor Science and Technology 2013 / 04 Vol. 28; Iss. 4

Conduction mechanisms in 2D and 3D SIS capacitors

Jacqueline, Sébastien, Domengès, Bernadette, Voiron, Frédéric, Murray, Hugues
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/4/045018
Date:
April, 2013
File:
PDF, 2.23 MB
english, 2013
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