On Surface Roughness Scattering-Limited Mobilities of...

IEEE Electron Device Letters 2009 / 09 Vol. 30; Iss. 9

On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs

Yi Zhao,, Takenaka, M., Takagi, S.
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2009.2026661
Date:
September, 2009
File:
PDF, 270 KB
english, 2009
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