AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off...

IEEE Electron Device Letters 2007 / 07 Vol. 28; Iss. 7

AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation

Mizutani, T., Ito, M., Kishimoto, S., Nakamura, F.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2007.900202
Date:
July, 2007
File:
PDF, 279 KB
english, 2007
Conversion to is in progress
Conversion to is failed