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AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation
Mizutani, T., Ito, M., Kishimoto, S., Nakamura, F.Volume:
28
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2007.900202
Date:
July, 2007
File:
PDF, 279 KB
english, 2007