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Resistive Switching Performance Improvement of ${\rm Ta}_{2}{\rm O}_{5-x}/{\rm TaO}_{y}$ Bilayer ReRAM Devices by Inserting ${\rm AlO}_{\delta}$ Barrier Layer
Wu, Huaqiang, Li, Xinyi, Wu, Minghao, Huang, Feiyang, Yu, Zhiping, Qian, HeVolume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2288311
Date:
January, 2014
File:
PDF, 634 KB
english, 2014