Area and Thickness Scaling of Forming Voltage of Resistive...

IEEE Electron Device Letters 2014 / 01 Vol. 35; Iss. 1

Area and Thickness Scaling of Forming Voltage of Resistive Switching Memories

Chen, An
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2288262
Date:
January, 2014
File:
PDF, 801 KB
english, 2014
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