The electrical breakdown properties of GaAs layers grown by molecular beam epitaxy at low temperature
Luo, J K, Thomas, H, Morgan, D V, Westwood, D, Williams, R HVolume:
9
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/9/12/006
Date:
December, 1994
File:
PDF, 438 KB
english, 1994