Volume 9; Issue 12

Semiconductor Science and Technology

Volume 9; Issue 12

1

Theory of Si donor-acceptor complexes in GaAs

Jones, R, Oberg, S

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 336 KB

english, 1994

2

AC conductivity of amorphous indium-selenium films

Khelfa, A, Benramdane, N, Guesdon, J P, Julien, C

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 277 KB

english, 1994

3

On the contribution of recombination currents in Schottky barrier diodes

Woods, N J, Hall, S

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 230 KB

english, 1994

4

Molecular beam epitaxy of ZnS on (001) GaAs using elemental sources

Lang, M, Schikora, D, Giftge, C, Widmer, T, Forstner, A, Brunthaler, G, Ortenberg, M von, Lischka, K

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 340 KB

english, 1994

5

Thermodynamic properties of the native oxide-Hg 1-x Zn x Te interface

Medvedev, Yu V, Berchenko, N N

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 386 KB

english, 1994

6

The electrical breakdown properties of GaAs layers grown by molecular beam epitaxy at low temperature

Luo, J K, Thomas, H, Morgan, D V, Westwood, D, Williams, R H

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 438 KB

english, 1994

7

Deuterium in InGaAs/GaAs strained quantum wells: an optically active impurity

Capizzi, M, Polimeni, A, Bonanni, B, Emiliani, V, Frova, A, Marangio, D, Martelli, F

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 456 KB

english, 1994

8

Elastic strain relaxation in patterned heteroepitaxial structures

Fischer, A, Kuhne, H, Roos, B, Richter, H

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 324 KB

english, 1994

9

Atomic-orbital interpretation of electronic structure of III-V semiconductors: GaAs versus AlAs

Boguslawski, P, Gorczyca, I

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 663 KB

english, 1994

10

Investigation of a short-period (001) HgTe-Hg 0.6 Cd 0.4 Te superlattice by transmission electron microscopy

Zhang, X F, Becker, C R, Zhang, H, He, L, Landwehr, G

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 937 KB

english, 1994

11

Transmission electron microscopy studies of GaAs/AlGaAs heterostructures regrown on patterned substrates

Dilger, M, Hohenstein, M, Phillipp, F, Eberl, K, Kurtenbach, A, Grambow, P, Lehmann, A, Heitmann, D, Klitzing, K von

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 604 KB

english, 1994

12

Cross-sectional scanning tunnelling microscopy of III-V semiconductor structures

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 1.57 MB

english, 1994

13

Non-radiative electron-hole pair recombination in degraded GaAs/GaAlAs double heterostructure

Vignaud, D, Farvacque, J L, Hichou, A El

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 383 KB

english, 1994

14

Monte Carlo simulation of atomic layer epitaxy

Plotz, W M, Hingerl, K, Sitter, H

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 373 KB

english, 1994

15

Processing and characterization of a PBT device using self-aligned CoSi 2

Hatzikonstantinidou, S, Nilsson, H -E, Frojdh, C, Petersson, C S, Kaplan, W

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 507 KB

english, 1994

16

The relationship between the film properties and the preparation conditions for a-Si:H grown by homogeneous chemical vapour deposition

Toneva, A, Mihailova, T, Danesh, P, Pantchev, B

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 305 KB

english, 1994

17

Low-frequency noise in quantum point contacts

Liefrink, F, Dijkhuis, J I, Houten, H van

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 885 KB

english, 1994

18

On the carrier lifetime in periodically delta -doped GaAs

Larsson, A, Jonsson, B, Cody, J G, Andersson, T G, Sodervall, U

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 395 KB

english, 1994

19

Piezospectroscopic behaviour and structure of the 0.95 eV photoluminescence centres in GaAs doped with Te or Sn

Gutkin, A A, Reshchikov, M A, Sosnovskii, V R

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 470 KB

english, 1994

20

Variable-area diode data analysis of surface and bulk effects in HgCdTe photodetector arrays

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 355 KB

english, 1994

21

Characterization of AuGe-based ohmic contacts to n-GaAs fabricated using ion-assisted deposition

Morgan, S P, Morgan, D V

Journal:

Semiconductor Science and Technology

Year:

1994

Language:

english

File:

PDF, 607 KB

english, 1994