Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs
Felbinger, Jonathan G., Fagerlind, Martin, Axelsson, Olle, Rorsman, Niklas, Gao, Xiang, Guo, Shiping, Schaff, William J., Eastman, Lester F.Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2143384
Date:
July, 2011
File:
PDF, 141 KB
english, 2011