Volume 32; Issue 7

IEEE Electron Device Letters

Volume 32; Issue 7

1

Mobility Improvement and Microwave Characterization of a Graphene Field Effect Transistor With Silicon Nitride Gate Dielectrics

Habibpour, O., Cherednichenko, S., Vukusic, J., Stake, J.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 331 KB

english, 2011

2

Numerical Study on the Influence of Piezoelectric Polarization on the Performance of p-on-n (0001)-Face GaN/InGaN p-i-n Solar Cells

Jih-Yuan Chang, Yen-Kuang Kuo

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 508 KB

english, 2011

3

Development of Engineered Sensing Membranes for Field-Effect Ion-Sensitive Devices Based on Stacked High-$\kappa$ Dielectric Layers

Jang, Hyun-June, Kim, Min-Soo, Cho, Won-Ju

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 604 KB

english, 2011

4

Growth and Characterization of p-InGaN/i-InGaN/n-GaN Double-Heterojunction Solar Cells on Patterned Sapphire Substrates

Chu, Mu-Tao, Liao, Wen-Yih, Horng, Ray-Hua, Tsai, Tsung-Yen, Wu, Tsai-Bau, Liu, Shu-Ping, Wu, Ming-Hsien, Lin, Ray-Ming

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 434 KB

english, 2011

5

High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate

Medjdoub, F., Zegaoui, M., Ducatteau, D., Rolland, N., Rolland, P. A.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 341 KB

english, 2011

6

Thin-Body N-Face GaN Transistor Fabricated by Direct Wafer Bonding

Ryu, Kevin K., Roberts, John C., Piner, Edwin L., Palacios, TomÃ¡s

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 281 KB

english, 2011

7

Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM

Shin, Jungho, Park, Jubong, Lee, Joonmyoung, Park, Sangsu, Kim, Seonghyun, Lee, Wootae, Kim, Insung, Lee, Daeseok, Hwang, Hyunsang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 355 KB

english, 2011

8

A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET

Giusi, Gino, Iannaccone, Giuseppe, Crupi, Felice, Ravaioli, Umberto

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 155 KB

english, 2011

9

Noise-Analysis-Based Model of Filamentary Switching ReRAM With $\hbox{ZrO}_{x}/\hbox{HfO}_{x}$ Stacks

Lee, Daeseok, Lee, Joonmyoung, Jo, Minseok, Park, Jubong, Siddik, Manzar, Hwang, Hyunsang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 412 KB

english, 2011

10

Mohseni Kiasari, Nima, Servati, Peyman

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 259 KB

english, 2011

11

Viability Study of All-III–V SRAM for Beyond-22-nm Logic Circuits

Oh, Saeroonter, Wong, H.-S. Philip

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 419 KB

english, 2011

12

210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation

R. Wang, G. Li, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, H. Xing

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 331 KB

english, 2011

13

Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs

Felbinger, Jonathan G., Fagerlind, Martin, Axelsson, Olle, Rorsman, Niklas, Gao, Xiang, Guo, Shiping, Schaff, William J., Eastman, Lester F.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 141 KB

english, 2011

14

Effect of off-State Stress and Drain Relaxation Voltage on Degradation of a Nanoscale nMOSFET at High Temperature

N. Lee, D. Baek, B. Kang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 135 KB

english, 2011

15

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Sun, Jia, Jiang, Jie, Dou, Wei, Zhou, Bin, Wan, Qing

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 288 KB

english, 2011

16

4H-SiC BJTs With Record Current Gains of 257 on (0001) and 335 on ($ \hbox{000}\bar{\hbox{1}}$)

Miyake, Hiroki, Kimoto, Tsunenobu, Suda, Jun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 221 KB

english, 2011

17

Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz

Teppati, Valeria, Zeng, Yuping, Ostinelli, Olivier, Bolognesi, C. R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 655 KB

english, 2011

18

GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

Xu, Min, Wang, Runsheng, Ye, Peide D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 341 KB

english, 2011

19

A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension

Sung, Woongje, Van Brunt, Edward, Baliga, B. J., Huang, Alex Q.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 440 KB

english, 2011

20

A Novel Double HBT-Based Capacitorless 1T DRAM Cell With Si/SiGe Heterojunctions

Shin, Ja Sun, Bae, Hagyoul, Jang, Jaeman, Yun, Daeyoun, Lee, Jieun, Hong, Euiyoun, Kim, Dae Hwan, Kim, Dong Myong

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 432 KB

english, 2011

21

High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for $\hbox{n}^{+}/\hbox{p}$ Junction Diode

Thareja, G., Chopra, S., Adams, B., Kim, Y., Moffatt, S., Saraswat, K., Nishi, Y.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 311 KB

english, 2011

22

Temperature Dependence of Electrical Characteristics of Strained nMOSFETs Using Stress Memorization Technique

Huang, Po Chin, Wu, San Lein, Chang, Shoou Jinn, Kuo, Cheng Wen, Chang, Ching Yao, Huang, Yao Tsung, Cheng, Yao Chin, Cheng, Osbert

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 368 KB

english, 2011

23

On the Electron and Hole Tunneling in a $ \hbox{HfO}_{2}$ Gate Stack With Extreme Interfacial-Layer Scaling

Ando, Takashi, Sathaye, Ninad D., Murali, Kota V. R. M., Cartier, Eduard A.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 398 KB

english, 2011

24

Heterojunction Tunneling Transistors Using Gate-Controlled Tunneling Across Silicon–Germanium/Silicon Epitaxial Thin Films

Nayfeh, Osama M.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 393 KB

english, 2011

25

Mobility Extraction for Nanotube TFTs

Liu, Zhiying, Qiu, Zhi-Jun, Zhang, Zhi-Bin, Zheng, Li-Rong, Zhang, Shi-Li

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 334 KB

english, 2011

26

Metal-Base Transistor With $\hbox{C}_{70}$

Schulz, Dietmar, Holz, Eikner, Yusoff, Abd Rashid Bin Mohd, Song, Ying, Shuib, Saiful Anuar

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 242 KB

english, 2011

27

NBTI Degradation in LTPS TFTs Under Mechanical Tensile Strain

Lin, Chia-Sheng, Chen, Ying-Chung, Chang, Ting-Chang, Jian, Fu-Yen, Hsu, Wei-Che, Kuo, Yuan-Jui, Dai, Chih-Hao, Chen, Te-Chih, Lo, Wen-Hung, Hsieh, Tien-Yu, Shih, Jou-Miao

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 399 KB

english, 2011

28

Aluminum Alloying in Local Contact Areas on Dielectrically Passivated Rear Surfaces of Silicon Solar Cells

Rauer, Michael, Woehl, Robert, Ruhle, Karola, Schmiga, Christian, Hermle, Martin, Horteis, Matthias, Biro, Daniel

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 231 KB

english, 2011

29

Grain Boundaries, Phase Impurities, and Anisotropic Thermal Conduction in Phase-Change Memory

Li, Zijian, Lee, Jaeho, Reifenberg, John P., Asheghi, Mehdi, Jeyasingh, Rakesh G. D., Wong, H.-S. Philip, Goodson, Kenneth E.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 402 KB

english, 2011

30

A New Voltage-Programmed Pixel Circuit for Enhancing the Uniformity of AMOLED Displays

Wu, Wei-Jing, Zhou, Lei, Yao, Ruo-He, Peng, Jun-Biao

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 323 KB

english, 2011

31

Evaluation of Cu Diffusion From Cu Through-Silicon Via (TSV) in Three-Dimensional LSI by Transient Capacitance Measurement

Bea, Jichel, Lee, Kangwook, Fukushima, Takafumi, Tanaka, Tetsu, Koyanagi, Mitsumasa

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 354 KB

english, 2011

32

A Novel Coaxial-Structured Amorphous-Silicon p-i-n Solar Cell With Al-Doped ZnO Nanowires

Li, Hung-Hsien, Yang, Po-Yu, Chiou, Si-Ming, Liu, Han-Wen, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 409 KB

english, 2011

33

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

Shi, Min, He, Jin, Zhang, Lining, Ma, Chenyue, Zhou, Xingye, Lou, Haijun, Zhuang, Hao, Wang, Ruonan, Li, Yongliang, Ma, Yong, Wu, Wen, Wang, Wenping, Chan, Mansun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 218 KB

english, 2011

34

Technology Assessment of Through-Silicon Via by Using $C$–$V$ and $C$–$t$ Measurements

Katti, Guruprasad, Stucchi, Michele, Velenis, Dimitrios, Thangaraju, Sarasvathi, De Meyer, Kristin, Dehaene, Wim, Beyne, Eric

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 390 KB

english, 2011

35

Study of Organic Thin-Film Transistors Under Electrostatic Discharge Stresses

Liu, Wen, Liou, Juin J., Kuribara, Kazunori, Fukuda, Kenjiro, Sekitani, Tsuyoshi, Someya, Takao, Chung, J., Jeong, Yoon-Ha, Wang, Zhixin, Lin, Cheng-Li

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 465 KB

english, 2011

36

$\hbox{Zr}_{x}\hbox{Ti}_{1 - x}\hbox{O}_{2}$-Based Ultraviolet Detectors Series

Zhang, Haifeng, Feng, Caihui, Liu, Caixia, Xie, Tianjiao, Zhou, Jingran, Ruan, Shengping

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 410 KB

english, 2011

37

Wafer-on-Wafer Stacking by Bumpless Cu–Cu Bonding and Its Electrical Characteristics

Tan, Chuan Seng, Peng, Lan, Li, Hong Yu, Lim, Dau Fatt, Gao, Shan

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 264 KB

english, 2011

38

High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

Passi, Vikram, Ravaux, Florent, Dubois, Emmanuel, Clavaguera, Simon, Carella, Alexandre, Celle, Caroline, Simonato, Jean-Pierre, Silvestri, Luca, Reggiani, Susanna, Vuillaume, Dominique, Raskin, Jean-

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

39

GaInNAsSb/GaAs Photodiodes for Long-Wavelength Applications

Tan, Siew Li, Zhang, Shiyong, Soong, Wai Mun, Goh, Yu Ling, Tan, Lionel J. J., Ng, Jo Shien, David, John P. R., Marko, Igor P., Adams, Alfred R., Sweeney, Stephen J., Allam, Jeremy

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 316 KB

english, 2011

40

Microthermal Stage for Electrothermal Characterization of Phase-Change Memory

Lee, Jaeho, Kim, SangBum, Jeyasingh, Rakesh, Asheghi, Mehdi, Wong, H.-S. Philip, Goodson, Kenneth E.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 405 KB

english, 2011

41

Series Resistance Extraction in Poly-Si TFTs With Channel Length and Mobility Variations

Zhou, Yan, Wang, Mingxiang, Wong, Man

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 452 KB

english, 2011

42

Contact Resistance Reduction to FinFET Source/Drain Using Novel Dielectric Dipole Schottky Barrier Height Modulation Method

Coss, Brian E., Smith, Casey, Loh, Wei-Yip, Majhi, Prashant, Wallace, Robert M., Kim, Jiyoung, Jammy, Raj

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 406 KB

english, 2011

43

Passivation-Induced Subthreshold Kink Effect of Ultrathin-Oxide Low-Temperature Polycrystalline Silicon Thin Film Transistors

Tsai, Mon-Chin, Liao, Ta-Chuan, Lee, I-Che, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 302 KB

english, 2011

44

Matching Model for Planar Bulk Transistors With Halo Implantation

Schaper, Ulrich, Einfeld, Jan

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 324 KB

english, 2011

45

Single-Side Fabricated Pressure Sensors for IC-Foundry-Compatible, High-Yield, and Low-Cost Volume Production

Wang, Jiachou, Li, Xinxin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 387 KB

english, 2011

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