AlInAs/GaInAs/InP double heterojunction bipolar transistor...

IEEE Electron Device Letters 1996 Vol. 17; Iss. 3

AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

Chanh Nguyen, Takyiu Liu, M. Chen, Hsiang-chih Sun, D. Rensch
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Volume:
17
Year:
1996
Language:
english
DOI:
10.1109/55.485191
File:
PDF, 326 KB
english, 1996
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