Volume 17; Issue 3

IEEE Electron Device Letters

Volume 17; Issue 3

1

Hole-induced 1/f noise increase in MOS transistors

Aoki, M., Kato, M.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

2

Characterization of polysilicon-gate depletion in MOS structures

Ricco, B., Versari, R., Esseni, D.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 296 KB

english, 1996

3

InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices

Chen, K.J., Maezawa, K., Yamamoto, M.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 395 KB

english, 1996

4

AlInAs/GaInAs/InP double heterojunction bipolar transistor with a novel base-collector design for power applications

Chanh Nguyen, Takyiu Liu, M. Chen, Hsiang-chih Sun, D. Rensch

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 326 KB

english, 1996

5

Recombination centers identification in very thin silicon epitaxial layers via lifetime measurements

S. Daliento, A. Sanseverino, P. Spirito, P. Sarro, L. Zeni

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 301 KB

english, 1996

6

Hot hole induced interface state generation and annihilation in SOI MOSFETs

S. Sinha, A. Zaleski, D. Ioannou, G. Campisi, H. Hughes

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 343 KB

english, 1996

7

Miyamoto, Y., Rios, J.M.M., Dentai, A.G., Chandrasekhar, S.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 325 KB

english, 1996

8

High-speed performance of 0.35 μm CMOS gates fabricated on low-dose SIMOX substrates with/without an N-well underneath the buried oxide layer

A. Yoshino, K. Kumagai, N. Hamatake, T. Tatsumi, H. Onishi, S. Kurosawa, K. Okumura

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 353 KB

english, 1996

9

Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination

Itoh, A., Kimoto, T., Matsunami, H.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 353 KB

english, 1996

10

Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films

Chun-Yen Chang,, Hsiao-Yi Lin,, Tan Fu Lei,, Juing-Yi Cheng,, Liang-Po Chen,, Bau-Tong Dai,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 479 KB

english, 1996

11

Accelerated reverse emitter-base bias stress methodologies and time-to-failure application

Neugroschel, A., Chih-Tang Sah,, Carroll, M.S.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 331 KB

english, 1996

12

An exclusive-nor based on resonant interband tunneling FET's

Shen, J., Tehrani, S., Goronkin, H., Kramer, G., Tsui, R.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 286 KB

english, 1996

13

Plasma damage and photo-annealing effects of thin gate oxides and oxynitrides during O2 plasma exposure

Lai, K., Kumar, K., Chou, A., Lee, J.C.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 358 KB

english, 1996

14

A new fabrication process of field emitter arrays with submicron gate apertures using local oxidation of silicon

Chun Gyoo Lee,, Byung Gook Park,, Jong Duk Lee,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 614 KB

english, 1996

15

Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)

Wen-Chau Liu,, Jung-Hui Tsai,, Wen-Shiung Lour,, Lih-Wen Laih,, Kong-Beng Thei,, Cheng-Zu Wu,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

16

The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source

Huang, C.T., Lei, T.F., Chu, C.H., Shvu, S.H.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 274 KB

english, 1996

17

Modeling of the critical current density of bipolar transistors with retrograde collector doping profile

Jong-Ho Lee,, Won-Gu Kang,, Jong-Son Lyu,, Jong Duk Lee,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 297 KB

english, 1996

18

A high-current and high-temperature 6H-SiC thyristor

Xie, K., Zhao, J.H., Flemish, J.R., Burke, T., Buchwald, W.R., Lorenzo, G., Singh, H.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 346 KB

english, 1996

19

A novel method for extracting the metallurgical channel length of MOSFETs using a single device

Hsin-Hsien Li,, Yu-Lin Chu,, Ching-Yuan Wu,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 276 KB

english, 1996

20

A resonant-cavity, separate-absorption-and-multiplication, avalanche photodiode with low excess noise factor

Anselm, K.A., Murtaza, S.S., Hu, C., Nie, H., Streetman, B.G., Campbell, J.C.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

21

An accurate semi-empirical saturation drain current model for LDD n-MOSFET

Kai Chen,, Wann, H.C., Duster, J., Pramanik, D., Nariani, S., Ko, P.K., Hu, C.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 270 KB

english, 1996

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