Fully silicided NiSi gate on La2O3 MOSFETs

IEEE Electron Device Letters 2003 Vol. 24; Iss. 5

Fully silicided NiSi gate on La2O3 MOSFETs

C. Lin, M. Ma, A. Chin, Y. Yeo, Chunxiang Zhu, M. Li, Dim-lee Kwong
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Volume:
24
Year:
2003
Language:
english
DOI:
10.1109/LED.2003.812569
File:
PDF, 247 KB
english, 2003
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