Demonstration of $L_{g} \sim \hbox{55}\ \hbox{nm}$ pMOSFETs With $\hbox{Si/Si}_{0.25}\hbox{Ge}_{0.75}/\hbox{Si}$ Channels, High $I_{\rm on}/I_{\rm off}\ (≫ \hbox{5} \times \hbox{10}^{4})$ , and Controlled Short Channel Effects (SCEs)
S. Lee, P. Majhi, J. Oh, B. Sassman, C. Young, A. Bowonder, W. Loh, K. Choi, B. Cho, H. Lee, P. Kirsch, H. R. Harris, W. Tsai, S. Datta, H. Tseng, S. K. Banerjee, R. JammyVolume:
29
Year:
2008
Language:
english
DOI:
10.1109/LED.2008.2002073
File:
PDF, 577 KB
english, 2008