High-Performance Ge nMOSFETs With $\hbox{n}^{+}\hbox{-}...

IEEE Electron Device Letters 2011 Vol. 32; Iss. 9

High-Performance Ge nMOSFETs With $\hbox{n}^{+}\hbox{-} \hbox{p}$ Junctions Formed by “Spin-On Dopant”

M. Jamil, J. Mantey, E. U. Onyegam, G. D. Carpenter, E. Tutuc, S. K. Banerjee
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Volume:
32
Year:
2011
Language:
english
DOI:
10.1109/LED.2011.2160142
File:
PDF, 289 KB
english, 2011
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