Program Trapped-Charge Effect on Random Telegraph-Noise...

IEEE Electron Device Letters 2009 Vol. 30; Iss. 11

Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory Cell

H. Ma, Y. Chou, J. Chiu, Tahui Wang, S. Ku, N. Zou, V. Chen, W. Lu, K. Chen, Chih-yuan Lu
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
30
Year:
2009
Language:
english
DOI:
10.1109/LED.2009.2030589
File:
PDF, 262 KB
english, 2009
Conversion to is in progress
Conversion to is failed