A low-temperature metal-doping technique for engineering...

IEEE Electron Device Letters 2003 Vol. 24; Iss. 9

A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors

J. Pan, C. Woo, M. Ngo, P. Besser, J. Pellerin, Qi Xiang, Ming-ren Lin
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Volume:
24
Year:
2003
Language:
english
DOI:
10.1109/LED.2003.815937
File:
PDF, 255 KB
english, 2003
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