Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10MeV Br ion
Sun, Yabin, Fu, Jun, Xu, Jun, Wang, Yudong, Zhou, Wei, Zhang, Wei, Cui, Jie, Li, Gaoqing, Liu, ZhihongVolume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.08.010
Date:
December, 2014
File:
PDF, 1.20 MB
english, 2014