Gate field emission induced breakdown in power SiC MESFETs

IEEE Electron Device Letters 2003 Vol. 24; Iss. 9

Gate field emission induced breakdown in power SiC MESFETs

Ho-young Cha, C. Thomas, Y. Choi, L. Eastman, M. Spencer
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Volume:
24
Year:
2003
Language:
english
DOI:
10.1109/LED.2003.815422
File:
PDF, 352 KB
english, 2003
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