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1200-V 5.2-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain
H. Lee, M. Domeij, C. Zetterling, M. Ostling, F. Allerstam, E. O. SveinbjornssonVolume:
28
Year:
2007
Language:
english
DOI:
10.1109/LED.2007.907418
File:
PDF, 225 KB
english, 2007