Novel Sub-10-nm Gate-All-Around Si Nanowire Channel Poly-Si...

IEEE Electron Device Letters 2011 Vol. 32; Iss. 2

Novel Sub-10-nm Gate-All-Around Si Nanowire Channel Poly-Si TFTs With Raised Source/Drain

Y. Lu, P. Kuo, Y. Wu, Y. Chen, T. Chao
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Volume:
32
Year:
2011
Language:
english
DOI:
10.1109/LED.2010.2093557
File:
PDF, 495 KB
english, 2011
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