A New Recess Method for SA-STI nand Flash Memory

IEEE Electron Device Letters 2012 Vol. 33; Iss. 6

A New Recess Method for SA-STI nand Flash Memory

Z. Wang, Y. Lee, R. Yang, Y. Li, H. Chen, C. J. Lin
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Volume:
33
Year:
2012
Language:
english
DOI:
10.1109/LED.2012.2192251
File:
PDF, 417 KB
english, 2012
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