Operating TSV in Stable Accumulation Capacitance Region by...

IEEE Electron Device Letters 2012 Vol. 33; Iss. 6

Operating TSV in Stable Accumulation Capacitance Region by Utilizing $\hbox{Al}_{2}\hbox{O}_{3}$-Induced Negative Fixed Charge

L. Zhang, L. Peng, H. Y. Li, G. Q. Lo, D. L. Kwong, C. S. Tan
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Volume:
33
Year:
2012
Language:
english
DOI:
10.1109/LED.2012.2190968
File:
PDF, 165 KB
english, 2012
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