The Role of Ti Capping Layer in HfOx-Based RRAM Devices

IEEE Electron Device Letters 2014 / 9 Vol. 35; Iss. 9

The Role of Ti Capping Layer in HfOx-Based RRAM Devices

Fang, Zheng, Wang, Xin Peng, Sohn, Joon, Weng, Bao Bin, Zhang, Zhi Ping, Chen, Zhi Xian, Tang, Yan Zhe, Lo, Guo-Qiang, Provine, J., Wong, Simon S., Wong, H.-S. Philip, Kwong, Dim-Lee
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2334311
Date:
September, 2014
File:
PDF, 780 KB
english, 2014
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