The impact of stress-induced defects on MOS electrostatics...

Solid-State Electronics 2015 / 01 Vol. 103

The impact of stress-induced defects on MOS electrostatics and short-channel effects

Esqueda, Ivan S.
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Volume:
103
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.07.018
Date:
January, 2015
File:
PDF, 989 KB
english, 2015
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