Volume 103

Solid-State Electronics

Volume 103

1

Self-aligned coplanar amorphous indium zinc oxide thin-film transistors with high performance

Park, Jae Chul, Lee, Ho-Nyeon

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.39 MB

english, 2015

2

Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band

Kawasaki, Tetsuya, Sugawara, Kenta, Dobroiu, Adrian, Eto, Takanori, Kurita, Yuki, Kojima, Kazuki, Yabe, Yuhei, Sugiyama, Hiroki, Watanabe, Takayuki, Suemitsu, Tetsuya, Ryzhii, Victor, Iwatsuki, Katsum

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.73 MB

english, 2015

3

GaN–InGaN LED efficiency reduction from parasitic electron currents in p-GaN

Togtema, G., Georgiev, V., Georgieva, D., Gergova, R., Butcher, K.S.A., Alexandrov, D.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 803 KB

english, 2015

4

Superconducting platinum silicide for electron cooling in silicon

Prest, M.J., Richardson-Bullock, J.S., Zhao, Q.T., Muhonen, J.T., Gunnarsson, D., Prunnila, M., Shah, V.A., Whall, T.E., Parker, E.H.C., Leadley, D.R.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 815 KB

english, 2015

5

Experimental developments of A2RAM memory cells on SOI and bulk substrates

Rodriguez, Noel, Gamiz, Francisco, Navarro, Carlos, Marquez, Carlos, Andrieu, François, Faynot, Olivier, Cristoloveanu, Sorin

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.52 MB

english, 2015

6

The impact of stress-induced defects on MOS electrostatics and short-channel effects

Esqueda, Ivan S.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 989 KB

english, 2015

7

Multi-input intrinsic and extrinsic field effect transistor models beyond cutoff frequency

Ibrahim, Nihal Y., Rafat, Nadia H., Elnahwy, Salah E.A.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 572 KB

english, 2015

8

On the effect of technology scaling on variation-resilient sub-threshold circuits

Reynders, Nele, Dehaene, Wim

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.69 MB

english, 2015

9

A finite state machine read-out chip for integrated surface acoustic wave sensors

Rakshit, Sambarta, Iliadis, Agis A.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.20 MB

english, 2015

10

Analytical modeling of multi-layered Printed Circuit Board dedicated to electronic component thermal characterization

Monier-Vinard, Eric, Laraqi, Najib, Dia, Cheikh-Tidiane, Nguyen, Minh-Nhat, Bissuel, Valentin

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 700 KB

english, 2015

11

A high performance compact Wilkinson power divider using GaAs-based optimized integrated passive device fabrication process for LTE application

Li, Yang, Wang, Cong, Kim, Nam-Young

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.40 MB

english, 2015

12

Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

Liau, Leo Chau-Kuang, Lin, Yun-Guo

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 565 KB

english, 2015

13

High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment

Seok, Ogyun, Han, Min-Koo, Byun, Young-Chul, Kim, Jiyoung, Shin, Hyun-Chang, Ha, Min-Woo

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 900 KB

english, 2015

14

Model of current-limited negative differential resistance in oxide-based resistance-switching devices

Chen, Frederick T.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 732 KB

english, 2015

15

A Built-In Self-Test Structure (BIST) for Resistive RAMs characterization: Application to bipolar OxRRAM

Aziza, H., Bocquet, M., Moreau, M., Portal, J-M.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

16

50nm AlxOy ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset

Ning, Sheyang, Iwasaki, Tomoko Ogura, Takeuchi, Ken

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.25 MB

english, 2015

17

Impact of p-body length on the electrical characteristics of high-voltage MOSFET with a lateral asymmetric channel

Baek, Ki-Ju, Na, Kee-Yeol, Lee, Young-Jun, Kim, Yeong-Seuk

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.49 MB

english, 2015

18

N-well resistance modelling in Q-factor of doughnut-shaped PN varactors

Marrero-Martín, M., González, B., García, J., Hernández, A.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.63 MB

english, 2015

19

Analytical models of on-resistance and breakdown voltage for 4H-SiC floating junction Schottky barrier diodes

Yuan, Hao, Tang, Xiaoyan, Song, Qingwen, Zhang, Yimen, Zhang, Yuming, Yang, Fei, Niu, Yingxi

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

20

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

Wu, Tian-Li, Marcon, Denis, Ronchi, Nicolo, Bakeroot, Benoit, You, Shuzhen, Stoffels, Steve, Van Hove, Marleen, Bisi, Davide, Meneghini, Matteo, Groeseneken, Guido, Decoutere, Stefaan

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 839 KB

english, 2015

21

Stable single mode operation of quantum cascade lasers by complex-coupled second-order distributed feedback grating

Liu, Yinghui, Zhang, Jinchuan, Jia, Zhiwei, Yao, Danyang, Yan, Fangliang, Liu, Fengqi, Wang, Lijun, Liu, Junqi, Wang, Zhanguo

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

22

Interface pn junction arrays with high yielded grown p-Si microneedles by vapor–liquid–solid method at low temperature

Islam, Md. Shofiqul, Ishida, Makoto

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.32 MB

english, 2015

23

Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Shin, Minju, Shi, Ming, Mouis, Mireille, Cros, Antoine, Josse, Emmanuel, Mukhopadhyay, Sutirha, Piot, Benjamin, Kim, Gyu-Tae, Ghibaudo, Gérard

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 884 KB

english, 2015

24

Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology

Wang, Guilei, Abedin, Ahmad, Moeen, Mahdi, Kolahdouz, Mohammadreza, Luo, Jun, Guo, Yiluan, Chen, Tao, Yin, Huaxiang, Zhu, Huilong, Li, Junfeng, Zhao, Chao, Radamson, Henry H.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.35 MB

english, 2015

25

Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs

Bühler, R.T., Agopian, P.G.D., Collaert, N., Simoen, E., Claeys, C., Martino, J.A.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.47 MB

english, 2015

26

Methodology for 1/f noise parameter extraction for high-voltage MOSFETs

Mavredakis, Nikolaos, Pflanzl, Walter, Seebacher, Ehrenfried, Bucher, Matthias

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.85 MB

english, 2015

27

Switching characteristics in Cu:SiO2 by chemical soak methods for resistive random access memory (ReRAM)

Chin, Fun-Tat, Lin, Yu-Hsien, Yang, Wen-Luh, Liao, Chin-Hsuan, Lin, Li-Min, Hsiao, Yu-Ping, Chao, Tien-Sheng

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.18 MB

english, 2015

28

Luminescence and spectrum variations caused by thermal annealing in undoped and doped polyfluorene OLEDs

Jokinen, K., Bykov, A., Sliz, R., Remes, K., Fabritius, T., Myllylä, R.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.22 MB

english, 2015

29

The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility

Tseng, Wei-Hao, Fang, Shao-Wei, Lu, Chia-Yang, Chuang, Hung-Yang, Chang, Fan-Wei, Lin, Guan-Yu, Chen, Tsu-Wei, Ma, Kang-Hung, Chen, Hong-Syu, Chen, Teng-Ke, Chen, Yu-Hung, Lee, Jen-Yu, Shih, Tsung-Hsi

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.00 MB

english, 2015

30

Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization

Hong, Won-Eui, Ro, Jae-Sang

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.59 MB

english, 2015

31

Alternative isolation-feature geometries and polarization-engineering of polar AlGaN/GaN HFETs

Loghmany, Alireza, Valizadeh, Pouya

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.21 MB

english, 2015

32

Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET

Anvarifard, Mohammad K., Orouji, Ali A.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 629 KB

english, 2015

33

Thermoelectric generators from SiO2/SiO2+Ge nanolayer thin films modified by MeV Si ions

Budak, S., Gulduren, E., Allen, B., Cole, J., Lassiter, J., Colon, T., Muntele, C., Alim, M.A., Bhattacharjee, S., Johnson, R.B.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 2.51 MB

english, 2015

34

Energy capability improvement of power DMOS transistors operating in pulsed conditions

Costachescu, Dragos, Pfost, Martin

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 869 KB

english, 2015

35

Estimation of the accuracy of the microwave FET equivalent circuit using the quasi-hydrodynamic model of electron transport

Garber, Gennadiy Z.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 764 KB

english, 2015

36

Design, fabrication and test of novel LDMOS-SCR for improving holding voltage

Yang, Liu, Wang, Yang, Zhou, Acheng, Jin, Xiangliang

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.61 MB

english, 2015

37

Integration of crystalline orientated γ-Al2O3 films and complementary metal–oxide–semiconductor circuits on Si(100) substrate

Oishi, Koji, Akai, Daisuke, Ishida, Makoto

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.47 MB

english, 2015

38

A novel scaling theory for fully depleted pi-gate (ΠG) MOSFETs

Chiang, Te-Kuang

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 645 KB

english, 2015

39

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

Richardson-Bullock, J.S., Prest, M.J., Shah, V.A., Gunnarsson, D., Prunnila, M., Dobbie, A., Myronov, M., Morris, R.J.H., Whall, T.E., Parker, E.H.C., Leadley, D.R.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 682 KB

english, 2015

40

Editorial Board

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 62 KB

english, 2015

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Tor version

Z-Library

Z-Library Since 2009 support@z-lib.do

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски