Design of Tunneling Field-Effect Transistors Based on...

IEEE Electron Device Letters 2010 / 05 Vol. 31; Iss. 5

Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

Lingquan Wang,, Yu, Edward, Taur, Yuan, Asbeck, Peter
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2044012
Date:
May, 2010
File:
PDF, 221 KB
english, 2010
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