220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

IEEE Electron Device Letters 2011 / 09 Vol. 32; Iss. 9

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Wang, Ronghua, Li, Guowang, Verma, Jai, Sensale-Rodriguez, Berardi, Fang, Tian, Guo, Jia, Hu, Zongyang, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Hui
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2158288
Date:
September, 2011
File:
PDF, 364 KB
english, 2011
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