AlGaN/GaN High-Electron-Mobility Transistors Fabricated...

IEEE Electron Device Letters 2011 / 05 Vol. 32; Iss. 5

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

Hyung-Seok Lee,, Dong Seup Lee,, Palacios, T
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2011.2114322
Date:
May, 2011
File:
PDF, 535 KB
english, 2011
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