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Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer
Choi, Woojin, Ryu, Hojin, Jeon, Namcheol, Lee, Minseong, Cha, Ho-Young, Seo, Kwang-SeokVolume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2291551
Date:
January, 2014
File:
PDF, 815 KB
english, 2014