Improved Switching Uniformity and Low-Voltage Operation in...

IEEE Electron Device Letters 2013 / 09 Vol. 34; Iss. 9

Improved Switching Uniformity and Low-Voltage Operation in ${\rm TaO}_{x}$-Based RRAM Using Ge Reactive Layer

Zhuo, Victor Yi-Qian, Jiang, Yu, Zhao, Rong, Shi, Lu Ping, Yang, Yi, Chong, Tow Chong, Robertson, John
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2271545
Date:
September, 2013
File:
PDF, 815 KB
english, 2013
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