III–V Multiple-Gate Field-Effect Transistors With...

IEEE Electron Device Letters 2011 / 02 Vol. 32; Iss. 2

III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

Chin, Hock-Chun, Gong, Xiao, Wang, Lanxiang, Lee, Hock Koon, Shi, Luping, Yeo, Yee-Chia
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2091672
Date:
February, 2011
File:
PDF, 293 KB
english, 2011
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