Electron mobility enhancement in strained-Si n-MOSFETs...

IEEE Electron Device Letters 2001 / 07 Vol. 22; Iss. 7

Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Zhi-Yuan Cheng,, Currie, M.T., Leitz, C.W., Taraschi, G., Fitzgerald, E.A., Hoyt, J.L., Antoniadas, D.A.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
22
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.930678
Date:
July, 2001
File:
PDF, 129 KB
english, 2001
Conversion to is in progress
Conversion to is failed