Volume 22; Issue 7

IEEE Electron Device Letters

Volume 22; Issue 7

1

Frequency-dependent resistive and capacitive components in RF MOSFETs

Yuhua Cheng, Matloubian, M.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 79 KB

english, 2001

2

A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC- and RF-performance

Yong Gui Xie,, Kasai, S., Takahashi, H., Chao Jiang,, Hasegawa, H.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 65 KB

english, 2001

3

Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates

Zhi-Yuan Cheng,, Currie, M.T., Leitz, C.W., Taraschi, G., Fitzgerald, E.A., Hoyt, J.L., Antoniadas, D.A.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 129 KB

english, 2001

4

Short channel characteristics of quasi-single-drain MOSFETs

Sugihara, K., Abe, Y., Oishi, T., Miura, N., Tokuda, Y.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 109 KB

english, 2001

5

Stack gate PZT/Al2O3 one transistor ferroelectric memory

Chin, A., Yang, M.Y., Sun, C.L., Chen, S.Y.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 65 KB

english, 2001

6

Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications

Wen-Chau Liu,, Kong-Beng Thei,, Hung-Ming Chuang,, Kun-Wei Lin,, Chin-Chuan Cheng,, Yen-Shih Ho,, Chi-Wen Su,, Shyh-Chyi Wong,, Chih-Hsien Lin,, Diaz, C.H.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 148 KB

english, 2001

7

Fabrication of self-aligned 90-nm fully depleted SOI CMOS SLOTFETs

Chen, C.K., Chen, C.L., Gouker, P.W., Wyatt, P.W., Yost, D.R., Burns, J.A., Suntharalingam, V., Fritze, M., Keast, L.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 259 KB

english, 2001

8

Optical characteristics of InGaP/GaAs HPTs

Chung-Kun Song,, Sang-Hun Lee,, Kang-Dae Kim,, Jae-Hong Park,, Bon-Won Koo,, Do-Hyun Kim,, Chang-Hee Hong,, Yong-Kyu Kim,, Sung-Bum Hwang,

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 80 KB

english, 2001

9

Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide

Min-Yu Tsai,, Horng-Chih Lin,, Da-Yuan Lee,, Tiao-Yuan Huang,

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 58 KB

english, 2001

10

Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric

Qiang Lu,, Yee Chia Yeo,, Yang, K.J., Lin, R., Polishchuk, I., Tsu-Jae King,, Chenming Hu,, Song, S.C., Luan, H.F., Dim-Lee Kwong,, Xin Guo,, Zhijiong Luo,, Xiewen Wang,, Tso-Ping Ma,

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 100 KB

english, 2001

11

Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic AlInAs/InGaAs HBT

Sokolich, M., Kramer, A.R., Boegeman, Y.K., Martinez, R.R.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 155 KB

english, 2001

12

Double pocket architecture using indium and boron for sub-100 nm MOSFETs

Odanaka, S., Hiroki, A., Yamashita, K., Nakanishi, K., Noda, T.

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 50 KB

english, 2001

13

ESD protection under grounded-up bond pads in 0.13 μm eight-level copper metal, fluorinated silicate glass low-k intermetal dielectric CMOS process technology

Kuo-Yu Chou,, Ming-Jer Chen,

Journal:

IEEE Electron Device Letters

Year:

2001

Language:

english

File:

PDF, 315 KB

english, 2001