High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions
Iwasaki, Takayuki, Hoshino, Yuto, Tsuzuki, Kohei, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Takeuchi, Daisuke, Okushi, Hideyo, Yamasaki, Satoshi, Hatano, MutsukoVolume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2271377
Date:
September, 2013
File:
PDF, 1.08 MB
english, 2013