Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering...

IEEE Electron Device Letters 2009 / 05 Vol. 30; Iss. 5

Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance

Lee, R.T.-P., Lim, A.E.-J., Kian-Ming Tan,, Tsung-Yang Liow,, Dong Zhi Chi,, Yee-Chia Yeo,
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Volume:
30
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2009.2017213
Date:
May, 2009
File:
PDF, 449 KB
english, 2009
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