Resistive Switching Behavior of Partially Anodized Aluminum...

IEEE Transactions on Electron Devices 2012 / 09 Vol. 59; Iss. 9

Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures

Zhu, Wei, Chen, T. P., Yang, Ming, Liu, Yang, Fung, S.
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Volume:
59
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2012.2205692
Date:
September, 2012
File:
PDF, 694 KB
english, 2012
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