Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film...

IEEE Electron Device Letters 2012 / 06 Vol. 33; Iss. 6

Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum

Lan, Linfeng, Zhao, Mingjie, Xiong, Nana, Xiao, Peng, Shi, Wen, Xu, Miao, Peng, Junbiao
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2190966
Date:
June, 2012
File:
PDF, 343 KB
english, 2012
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