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Improvement of breakdown voltage in SOI n-MOSFETs using the gate-recessed (GR) structure
Jin-Hyeok Choi,, Young-June Park,, Hong-Shick Min,Volume:
17
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.485165
Date:
April, 1996
File:
PDF, 342 KB
english, 1996