Volume 17; Issue 4

IEEE Electron Device Letters

Volume 17; Issue 4

1

Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization

Seok-Woon Lee,, Seung-Ki Joo,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 376 KB

english, 1996

2

Influence of quasi-ballistic base transport on the small signal y-parameters of Si bipolar transistors

Alam, M.A., Schroter, M., Lundstrom, M.S.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 294 KB

english, 1996

3

Improvement of breakdown voltage in SOI n-MOSFETs using the gate-recessed (GR) structure

Jin-Hyeok Choi,, Young-June Park,, Hong-Shick Min,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

4

Correlation between inversion layer mobility and surface roughness measured by AFM

Yamanaka, T., Fang, S.J., Heng-Chih Lin,, Snyder, J.P., Helms, C.R.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

5

Gate length effect on the RTS noise amplitude in SOI MOSFETs

Simoen, E., Claeys, C.

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 256 KB

english, 1996

6

Reliable fluorinated thin gate oxides prepared by liquid phase deposition following rapid thermal process

Wei-Shin Lu,, Jenn-Gwo Hwu,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

7

A novel 0.1 μm MOSFET structure with inverted sidewall and recessed channel

Jeongho Lyu,, Byung-Gook Park,, Chun, K., Jong Duk Lee,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 250 KB

english, 1996

8

Stability of N-channel polysilicon thin-film transistors with ECR plasma thermal gate oxide

Jung-Yeal Lee,, Chul-Hi Han,, Choong-Ki Kim,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 327 KB

english, 1996

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