Direct tungsten on silicon dioxide formed by RF...

IEEE Electron Device Letters 1988 / 11 Vol. 9; Iss. 11

Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition

Wong, M., Saraswat, K.C.
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Volume:
9
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.9283
Date:
November, 1988
File:
PDF, 284 KB
english, 1988
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