Volume 9; Issue 11

IEEE Electron Device Letters

Volume 9; Issue 11
2

Application of ink jet technology on photovoltaic metallization

Year:
1988
Language:
english
File:
PDF, 150 KB
english, 1988
4

p/sup +/-AlInAs/InP junction FETs by selective molecular beam epitaxy

Year:
1988
Language:
english
File:
PDF, 300 KB
english, 1988
5

Leakage current degradation in n-MOSFETs due to hot-electron stress

Year:
1988
Language:
english
File:
PDF, 236 KB
english, 1988
11

Charge transport and trapping characteristics in thin nitride-oxide stacked films

Year:
1988
Language:
english
File:
PDF, 272 KB
english, 1988
12

Leakage-current-induced hot-carrier degradation of p-channel MOSFETs

Year:
1988
Language:
english
File:
PDF, 259 KB
english, 1988
13

High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs

Year:
1988
Language:
english
File:
PDF, 249 KB
english, 1988
15

Dependence of Al-Si/Si contact resistance on substrate surface orientation

Year:
1988
Language:
english
File:
PDF, 281 KB
english, 1988