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Volume 9; Issue 11
Main
IEEE Electron Device Letters
Volume 9; Issue 11
IEEE Electron Device Letters
Volume 9; Issue 11
1
AlGaAs/InGaAs/GaAs quantum-well power MISFET at millimeter-wave frequencies
Kim, B.
,
Matyi, R.J.
,
Wurtele, M.
,
Tserng, H.Q.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 244 KB
Your tags:
english, 1988
2
Application of ink jet technology on photovoltaic metallization
Teng, K.F.
,
Vest, R.W.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 150 KB
Your tags:
english, 1988
3
Thin-film transistors incorporating a thin, high-quality PECVD SiO/sub 2/ gate dielectric
D. Buchanan
,
J. Batey
,
E. Tierney
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 316 KB
Your tags:
english, 1988
4
p/sup +/-AlInAs/InP junction FETs by selective molecular beam epitaxy
J. Woodhouse
,
J. Donnelly
,
M. Manfra
,
R. Bailey
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 300 KB
Your tags:
english, 1988
5
Leakage current degradation in n-MOSFETs due to hot-electron stress
C. Duvvury
,
D. Redwine
,
H. Stiegler
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 236 KB
Your tags:
english, 1988
6
Electron space-charge effects on high-frequency performance of AlGaAs/GaAs HBTs under high-current-density operation
K. Morizuka
,
R. Katoh
,
K. Tsuda
,
M. Asaka
,
N. Iizuka
,
M. Obara
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 277 KB
Your tags:
english, 1988
7
Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition
Wong, M.
,
Saraswat, K.C.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 284 KB
Your tags:
english, 1988
8
Failure in CMOS circuits induced by hot carriers in multi-gate transistors
Chatterjee, A.
,
Aur, S.-W.
,
Niuya, T.
,
Yang, P.
,
Seitchik, J.A.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 256 KB
Your tags:
english, 1988
9
AlGaAs/GaAs HBTs fabricated by a self-alignment technology using polyimide for electrode separation
Morizuka, K.
,
Asaka, M.
,
Iizuka, N.
,
Tsuda, K.
,
Obara, M.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 227 KB
Your tags:
english, 1988
10
An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors
Schumacher, H.
,
LeBlanc, H.P.
,
Soole, J.
,
Bhat, R.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 292 KB
Your tags:
english, 1988
11
Charge transport and trapping characteristics in thin nitride-oxide stacked films
Young, K.K.
,
Hu, C.
,
Oldham, W.G.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 272 KB
Your tags:
english, 1988
12
Leakage-current-induced hot-carrier degradation of p-channel MOSFETs
Rodder, M.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 259 KB
Your tags:
english, 1988
13
High-performance In/sub 0.08/Ga/sub 0.92/As MESFETs on GaAs
Shih, H.-D.
,
Kim, B.
,
Bradshaw, K.
,
Tserng, H.Q.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 249 KB
Your tags:
english, 1988
14
Transit-time reduction in AlGaAs/GaAs HBTs utilizing velocity overshoot in the p-type collector region
Morizuka, K.
,
Katoh, R.
,
Asaka, M.
,
Iizuka, N.
,
Tsuda, K.
,
Obara, M.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 270 KB
Your tags:
english, 1988
15
Dependence of Al-Si/Si contact resistance on substrate surface orientation
Onoda, H.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 281 KB
Your tags:
english, 1988
16
Drain-avalanche and hole-trapping induced gate leakage in thin-oxide MOS devices
Chang, C.
,
Haddad, S.
,
Swaminathan, B.
,
Lien, J.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 289 KB
Your tags:
english, 1988
17
Electrical properties of Ga-implanted Si p/sup +/-n shallow junctions fabricated by low-temperature rapid thermal annealing
Lin, C.-M.
,
Steckl, A.J.
,
Chow, T.P.
Journal:
IEEE Electron Device Letters
Year:
1988
Language:
english
File:
PDF, 347 KB
Your tags:
english, 1988
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